The structural and electrical comparison of Y 2 O 3 and Ti-doped Y 2 O 3 dielectrics

Ming Ling Lee; Chyuan Haur Kao; Hsiang Chen; Chan Yu Lin; Yu Teng Chung; Kow-Ming Chang

doi:10.1016/j.ceramint.2016.11.110

The structural and electrical comparison of Y ₂ O ₃ and Ti-doped Y ₂ O ₃ dielectrics

Ming Ling Lee, Chyuan Haur Kao^*, Hsiang Chen, Chan Yu Lin, Yu Teng Chung, Kow-Ming Chang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

A Ti-doped Y ₂ O ₃ (Y ₂ Ti ₂ O ₅ ) dielectric on polycrystalline silicon followed by rapid thermal annealing results in improved characteristics including a higher effective dielectric constant, higher breakdown electric field, lower electron trapping rate, and larger charge-to-breakdown when compared with Y ₂ O ₃ . The performance of high-k Y ₂ O ₃ and Y ₂ Ti ₂ O ₅ dielectrics were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), capacitance-voltage, and current density-voltage. Incorporating Ti into the Y ₂ O ₃ dielectric imparts improvements in the structural and electrical performance of the material. The Y ₂ Ti ₂ O ₅ dielectric with 800 °C annealing treatment has the best performance among all the samples tested.

Original language	English
Pages (from-to)	3043-3050
Number of pages	8
Journal	Ceramics International
Volume	43
Issue number	3
DOIs	https://doi.org/10.1016/j.ceramint.2016.11.110
State	Published - 15 Feb 2017

Keywords

Ti-doped
Y2O3
Y2Ti2O5

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10.1016/j.ceramint.2016.11.110

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@article{d29bcc564214494b8021a91d70e232c1,

title = "The structural and electrical comparison of Y 2 O 3 and Ti-doped Y 2 O 3 dielectrics",

abstract = " A Ti-doped Y 2 O 3 (Y 2 Ti 2 O 5 ) dielectric on polycrystalline silicon followed by rapid thermal annealing results in improved characteristics including a higher effective dielectric constant, higher breakdown electric field, lower electron trapping rate, and larger charge-to-breakdown when compared with Y 2 O 3 . The performance of high-k Y 2 O 3 and Y 2 Ti 2 O 5 dielectrics were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), capacitance-voltage, and current density-voltage. Incorporating Ti into the Y 2 O 3 dielectric imparts improvements in the structural and electrical performance of the material. The Y 2 Ti 2 O 5 dielectric with 800 °C annealing treatment has the best performance among all the samples tested. ",

keywords = "Ti-doped, Y2O3, Y2Ti2O5",

author = "Lee, {Ming Ling} and Kao, {Chyuan Haur} and Hsiang Chen and Lin, {Chan Yu} and Chung, {Yu Teng} and Kow-Ming Chang",

year = "2017",

month = feb,

day = "15",

doi = "10.1016/j.ceramint.2016.11.110",

language = "English",

volume = "43",

pages = "3043--3050",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Limited",

number = "3",

}

TY - JOUR

T1 - The structural and electrical comparison of Y 2 O 3 and Ti-doped Y 2 O 3 dielectrics

AU - Lee, Ming Ling

AU - Kao, Chyuan Haur

AU - Chen, Hsiang

AU - Lin, Chan Yu

AU - Chung, Yu Teng

AU - Chang, Kow-Ming

PY - 2017/2/15

Y1 - 2017/2/15

N2 - A Ti-doped Y 2 O 3 (Y 2 Ti 2 O 5 ) dielectric on polycrystalline silicon followed by rapid thermal annealing results in improved characteristics including a higher effective dielectric constant, higher breakdown electric field, lower electron trapping rate, and larger charge-to-breakdown when compared with Y 2 O 3 . The performance of high-k Y 2 O 3 and Y 2 Ti 2 O 5 dielectrics were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), capacitance-voltage, and current density-voltage. Incorporating Ti into the Y 2 O 3 dielectric imparts improvements in the structural and electrical performance of the material. The Y 2 Ti 2 O 5 dielectric with 800 °C annealing treatment has the best performance among all the samples tested.

AB - A Ti-doped Y 2 O 3 (Y 2 Ti 2 O 5 ) dielectric on polycrystalline silicon followed by rapid thermal annealing results in improved characteristics including a higher effective dielectric constant, higher breakdown electric field, lower electron trapping rate, and larger charge-to-breakdown when compared with Y 2 O 3 . The performance of high-k Y 2 O 3 and Y 2 Ti 2 O 5 dielectrics were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), capacitance-voltage, and current density-voltage. Incorporating Ti into the Y 2 O 3 dielectric imparts improvements in the structural and electrical performance of the material. The Y 2 Ti 2 O 5 dielectric with 800 °C annealing treatment has the best performance among all the samples tested.

KW - Ti-doped

KW - Y2O3

KW - Y2Ti2O5

UR - http://www.scopus.com/inward/record.url?scp=85006470402&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2016.11.110

DO - 10.1016/j.ceramint.2016.11.110

M3 - Article

AN - SCOPUS:85006470402

SN - 0272-8842

VL - 43

SP - 3043

EP - 3050

JO - Ceramics International

JF - Ceramics International

IS - 3

ER -

The structural and electrical comparison of Y ₂ O ₃ and Ti-doped Y ₂ O ₃ dielectrics

Abstract

Keywords

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