The stochastic ferroelectric field-effect transistors-based probabilistic-bits: from device physics analysis to invertible logic applications

Sheng Luo*, Yihan He, Chao Fang, Baofang Cai, Xiao Gong, Gengchiau Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A probabilistic-bit (p-bit) is the fundamental building block in the circuit network of probabilistic computing (PC), producing a continuous random bitstream with tunable probability. Among the various p-bit designs, the recently proposed ferroelectric FET (FeFET)-based p-bit is found to possess the advantages of both ultralow hardware cost and CMOS compatibility. In this work, we perform a comprehensive analysis of the stochasticity in ferroelectric (FE) material, revealing the mechanisms of domain dynamics and temperature on FE stochasticity. The device-to-device variations of several device/material properties are then evaluated, which affect the probabilistic-curves to different extents. Furthermore, the integer factorization is performed based on the invertible logic circuits comprising of FE p-bits to verify its functionality. The accuracy of integer factorization is found to highly depend on FE p-bits’ stochasticity, and various methods have been implemented to optimize its performance, providing unique insights for future large-scale PC applications.

Original languageEnglish
Article number02SP77
JournalJapanese journal of applied physics
Volume63
Issue number2
DOIs
StatePublished - 29 Feb 2024

Keywords

  • FeFET
  • ferroelectric material
  • integer factorization
  • invertible logics
  • probabilistic computing
  • probabilistic-bits

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