The role of lattice dynamics in ferroelectric switching

Qiwu Shi; Eric Parsonnet; Xiaoxing Cheng; Natalya Fedorova; Ren Ci Peng; Abel Fernandez; Alexander Qualls; Xiaoxi Huang; Xue Chang; Hongrui Zhang; David Pesquera; Sujit Das; Dmitri Nikonov; Ian Young; Long Qing Chen; Lane W. Martin; Yen-Lin Huang; Jorge Íñiguez; Ramamoorthy Ramesh

doi:10.1038/s41467-022-28622-z

The role of lattice dynamics in ferroelectric switching

Qiwu Shi^*, Eric Parsonnet, Xiaoxing Cheng, Natalya Fedorova, Ren Ci Peng, Abel Fernandez, Alexander Qualls, Xiaoxi Huang, Xue Chang, Hongrui Zhang, David Pesquera, Sujit Das, Dmitri Nikonov, Ian Young, Long Qing Chen, Lane W. Martin, Yen-Lin Huang, Jorge Íñiguez, Ramamoorthy Ramesh

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO₃) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO₃ films, to large (10’s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching.

Original language	English
Article number	1110
Pages (from-to)	1-10
Number of pages	10
Journal	Nature Communications
Volume	13
Issue number	1
DOIs	https://doi.org/10.1038/s41467-022-28622-z
State	Published - 2 Mar 2022

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Shi, Q., Parsonnet, E., Cheng, X., Fedorova, N., Peng, R. C., Fernandez, A., Qualls, A., Huang, X., Chang, X., Zhang, H., Pesquera, D., Das, S., Nikonov, D., Young, I., Chen, L. Q., Martin, L. W., Huang, Y.-L., Íñiguez, J., & Ramesh, R. (2022). The role of lattice dynamics in ferroelectric switching. Nature Communications, 13(1), 1-10. Article 1110. https://doi.org/10.1038/s41467-022-28622-z

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abstract = "Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10{\textquoteright}s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching.",

author = "Qiwu Shi and Eric Parsonnet and Xiaoxing Cheng and Natalya Fedorova and Peng, {Ren Ci} and Abel Fernandez and Alexander Qualls and Xiaoxi Huang and Xue Chang and Hongrui Zhang and David Pesquera and Sujit Das and Dmitri Nikonov and Ian Young and Chen, {Long Qing} and Martin, {Lane W.} and Yen-Lin Huang and Jorge {\'I}{\~n}iguez and Ramamoorthy Ramesh",

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Shi, Q, Parsonnet, E, Cheng, X, Fedorova, N, Peng, RC, Fernandez, A, Qualls, A, Huang, X, Chang, X, Zhang, H, Pesquera, D, Das, S, Nikonov, D, Young, I, Chen, LQ, Martin, LW, Huang, Y-L, Íñiguez, J & Ramesh, R 2022, 'The role of lattice dynamics in ferroelectric switching', Nature Communications, vol. 13, no. 1, 1110, pp. 1-10. https://doi.org/10.1038/s41467-022-28622-z

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AU - Parsonnet, Eric

AU - Cheng, Xiaoxing

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AU - Peng, Ren Ci

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AU - Qualls, Alexander

AU - Huang, Xiaoxi

AU - Chang, Xue

AU - Zhang, Hongrui

AU - Pesquera, David

AU - Das, Sujit

AU - Nikonov, Dmitri

AU - Young, Ian

AU - Chen, Long Qing

AU - Martin, Lane W.

AU - Huang, Yen-Lin

AU - Íñiguez, Jorge

AU - Ramesh, Ramamoorthy

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AB - Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10’s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching.

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The role of lattice dynamics in ferroelectric switching

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