The role of high-κTiHfO gate dielectric in sputtered ZnO thin-film transistors

Nai Chao Su; Shui Jinn Wang; Chin Chuan Huang; Yu Han Chen; Hao Yuan Huang; Chen Kuo Chiang; Chien Hung Wu; Albert Chin

doi:10.1143/JJAP.49.04DA12

The role of high-_κTiHfO gate dielectric in sputtered ZnO thin-film transistors

Nai Chao Su^*, Shui Jinn Wang, Chin Chuan Huang, Yu Han Chen, Hao Yuan Huang, Chen Kuo Chiang, Chien Hung Wu, Albert Chin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this study, we demonstrate the role of a titanium hafnium oxide (TiHfO) gate dielectric in improving the overall electronic performance of a ZnO thin-film transistor (TFT). Ti_x Hf_1-xO (x =0:63) was fabricated by the rf co-sputtering technique. Using TiHfO as the gate dielectric, the device fabricated in this study exhibits a threshold voltage of 0.34 V, a subthreshold swing of 0.23 V/dec, a field-effect mobility of 2.1cm2 V^-1 s^-1, and an ON/OFF current ratio of 105. The small subthreshold swing and low positive threshold voltage are attributed to the higher value of k of 40 for the dielectric. This result enables device operation below 2 V, allowing its use in low-power driving circuits in display applications.

Original language	English
Article number	04DA12
Journal	Japanese journal of applied physics
Volume	49
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.49.04DA12
State	Published - Apr 2010

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abstract = "In this study, we demonstrate the role of a titanium hafnium oxide (TiHfO) gate dielectric in improving the overall electronic performance of a ZnO thin-film transistor (TFT). Tix Hf1-xO (x =0:63) was fabricated by the rf co-sputtering technique. Using TiHfO as the gate dielectric, the device fabricated in this study exhibits a threshold voltage of 0.34 V, a subthreshold swing of 0.23 V/dec, a field-effect mobility of 2.1cm2 V-1 s-1, and an ON/OFF current ratio of 105. The small subthreshold swing and low positive threshold voltage are attributed to the higher value of k of 40 for the dielectric. This result enables device operation below 2 V, allowing its use in low-power driving circuits in display applications.",

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T1 - The role of high-κTiHfO gate dielectric in sputtered ZnO thin-film transistors

AU - Su, Nai Chao

AU - Wang, Shui Jinn

AU - Huang, Chin Chuan

AU - Chen, Yu Han

AU - Huang, Hao Yuan

AU - Chiang, Chen Kuo

AU - Wu, Chien Hung

AU - Chin, Albert

PY - 2010/4

Y1 - 2010/4

N2 - In this study, we demonstrate the role of a titanium hafnium oxide (TiHfO) gate dielectric in improving the overall electronic performance of a ZnO thin-film transistor (TFT). Tix Hf1-xO (x =0:63) was fabricated by the rf co-sputtering technique. Using TiHfO as the gate dielectric, the device fabricated in this study exhibits a threshold voltage of 0.34 V, a subthreshold swing of 0.23 V/dec, a field-effect mobility of 2.1cm2 V-1 s-1, and an ON/OFF current ratio of 105. The small subthreshold swing and low positive threshold voltage are attributed to the higher value of k of 40 for the dielectric. This result enables device operation below 2 V, allowing its use in low-power driving circuits in display applications.

AB - In this study, we demonstrate the role of a titanium hafnium oxide (TiHfO) gate dielectric in improving the overall electronic performance of a ZnO thin-film transistor (TFT). Tix Hf1-xO (x =0:63) was fabricated by the rf co-sputtering technique. Using TiHfO as the gate dielectric, the device fabricated in this study exhibits a threshold voltage of 0.34 V, a subthreshold swing of 0.23 V/dec, a field-effect mobility of 2.1cm2 V-1 s-1, and an ON/OFF current ratio of 105. The small subthreshold swing and low positive threshold voltage are attributed to the higher value of k of 40 for the dielectric. This result enables device operation below 2 V, allowing its use in low-power driving circuits in display applications.

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JO - Japanese journal of applied physics

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IS - 4 PART 2

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The role of high-_κTiHfO gate dielectric in sputtered ZnO thin-film transistors

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