The role of a resist during O₂ plasma ashing and its impact on the reliability evaluation of ultrathin gate oxides

Keyphrases

• Device Degradation 100%
• Reliability Evaluation 100%
• Ultra-thin Gate Oxide 100%
• O2 Plasma 100%
• Plasma Ashing 100%
• Wafer 50%
• Wafer Surface 50%
• Circuit Model 50%
• Thick Gate Oxide 50%
• Oxide Thickness 50%
• Downscaling 50%
• Antenna 50%
• Wet Etch Process 50%
• Overlayer 50%
• Equivalent Capacitor 50%
• Self-adjustment 50%
• Ashing 50%
• Area Ratio 50%
• Plasma Exposure 50%
• Degradation Effect 50%
• Enhanced Degradation 50%
• Protective Layer 50%
• Capacitor Circuit 50%
• Adjustment Behavior 50%

Engineering

• Reliability Evaluation 100%
• Gate Oxide 100%
• Experimental Result 50%
• Oxide Thickness 50%
• Circuit Model 50%
• Antenna 50%
• Good Correlation 50%
• Etching Process 50%
• Area Ratio 50%
• Protective Layer 50%

Material Science

• Oxide Compound 100%
• Electronic Circuit 33%
• Capacitor 33%
• Wet Etching 33%
• Surface (Surface Science) 33%