The polarity bias control of indium zinc oxide thin film transistor for gas sensor application

Li Feng Teng; Po-Tsun Liu; Yi Teh Chou; Yang Shun Fan

The polarity bias control of indium zinc oxide thin film transistor for gas sensor application

Li Feng Teng^*, Po-Tsun Liu, Yi Teh Chou, Yang Shun Fan

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to conference › Paper › peer-review

Abstract

An obvious V_th shift was observed after gate-bias stress and recovered. This metastability was attributed to the interaction between the exposed a-IZO backchannel and oxygen/moisture from the atmosphere, regardless of the polarity of stress voltage. This water/moisture sensitivity characteristic can be used for gas sensor application.

Original language	English
Pages	253-255
Number of pages	3
State	Published - 2010
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 1 Dec 2010 → 3 Dec 2010

Conference

Conference	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	1/12/10 → 3/12/10

Cite this

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title = "The polarity bias control of indium zinc oxide thin film transistor for gas sensor application",

abstract = "An obvious Vth shift was observed after gate-bias stress and recovered. This metastability was attributed to the interaction between the exposed a-IZO backchannel and oxygen/moisture from the atmosphere, regardless of the polarity of stress voltage. This water/moisture sensitivity characteristic can be used for gas sensor application.",

author = "Teng, {Li Feng} and Po-Tsun Liu and Chou, {Yi Teh} and Fan, {Yang Shun}",

year = "2010",

language = "English",

pages = "253--255",

note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

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T1 - The polarity bias control of indium zinc oxide thin film transistor for gas sensor application

AU - Teng, Li Feng

AU - Liu, Po-Tsun

AU - Chou, Yi Teh

AU - Fan, Yang Shun

PY - 2010

Y1 - 2010

N2 - An obvious Vth shift was observed after gate-bias stress and recovered. This metastability was attributed to the interaction between the exposed a-IZO backchannel and oxygen/moisture from the atmosphere, regardless of the polarity of stress voltage. This water/moisture sensitivity characteristic can be used for gas sensor application.

AB - An obvious Vth shift was observed after gate-bias stress and recovered. This metastability was attributed to the interaction between the exposed a-IZO backchannel and oxygen/moisture from the atmosphere, regardless of the polarity of stress voltage. This water/moisture sensitivity characteristic can be used for gas sensor application.

UR - http://www.scopus.com/inward/record.url?scp=79956331981&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956331981

SP - 253

EP - 255

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

The polarity bias control of indium zinc oxide thin film transistor for gas sensor application

Abstract

Conference

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