The polarity bias control of indium zinc oxide thin film transistor for gas sensor application

Li Feng Teng*, Po-Tsun Liu, Yi Teh Chou, Yang Shun Fan

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

An obvious Vth shift was observed after gate-bias stress and recovered. This metastability was attributed to the interaction between the exposed a-IZO backchannel and oxygen/moisture from the atmosphere, regardless of the polarity of stress voltage. This water/moisture sensitivity characteristic can be used for gas sensor application.

Original languageEnglish
Pages253-255
Number of pages3
StatePublished - 2010
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: 1 Dec 20103 Dec 2010

Conference

Conference17th International Display Workshops, IDW'10
Country/TerritoryJapan
CityFukuoka
Period1/12/103/12/10

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