The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

G. W. Shu; C. K. Wang; J. S. Wang; J. L. Shen; R. S. Hsiao; Wu-Ching Chou; Jenn-Fang Chen; T. Y. Lin; C. H. Ko; C. M. Lai

doi:10.1088/0957-4484/17/23/002

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

G. W. Shu, C. K. Wang, J. S. Wang, J. L. Shen^*, R. S. Hsiao, Wu-Ching Chou, Jenn-Fang Chen, T. Y. Lin, C. H. Ko, C. M. Lai

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170K, and then decreases as the temperature increases further above 170K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs.

Original language	English
Article number	002
Pages (from-to)	5722-5725
Number of pages	4
Journal	Nanotechnology
Volume	17
Issue number	23
DOIs	https://doi.org/10.1088/0957-4484/17/23/002
State	Published - 14 Dec 2006

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title = "The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers",

abstract = "The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170K, and then decreases as the temperature increases further above 170K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs.",

author = "Shu, {G. W.} and Wang, {C. K.} and Wang, {J. S.} and Shen, {J. L.} and Hsiao, {R. S.} and Wu-Ching Chou and Jenn-Fang Chen and Lin, {T. Y.} and Ko, {C. H.} and Lai, {C. M.}",

year = "2006",

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doi = "10.1088/0957-4484/17/23/002",

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TY - JOUR

T1 - The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

AU - Shu, G. W.

AU - Wang, C. K.

AU - Wang, J. S.

AU - Shen, J. L.

AU - Hsiao, R. S.

AU - Chou, Wu-Ching

AU - Chen, Jenn-Fang

AU - Lin, T. Y.

AU - Ko, C. H.

AU - Lai, C. M.

PY - 2006/12/14

Y1 - 2006/12/14

N2 - The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170K, and then decreases as the temperature increases further above 170K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs.

AB - The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170K, and then decreases as the temperature increases further above 170K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs.

UR - http://www.scopus.com/inward/record.url?scp=33846048887&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/17/23/002

DO - 10.1088/0957-4484/17/23/002

M3 - Article

AN - SCOPUS:33846048887

SN - 0957-4484

VL - 17

SP - 5722

EP - 5725

JO - Nanotechnology

JF - Nanotechnology

IS - 23

M1 - 002

ER -

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

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