The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination

Ya Hsiang Tai; Yi Cheng Yuan; Cheng Che Tu; Pin Chun Wang

doi:10.1109/JEDS.2022.3164082

The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination

Ya Hsiang Tai, Yi Cheng Yuan^*, Cheng Che Tu, Pin Chun Wang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) used as photo sensor has been reported in previous literature. However, the noise behavior of gap-type a-Si TFT is not inspected yet. Therefore, we investigate the noise response of the gap-type a-Si TFT under illumination in this paper. We compare the difference between the results of the gap-type and the conventional-type TFTs. In addition, we analyze it including the perspectives of power spectrum, integral power spectrum, Hooge parameter, fluctuate slope. Finally, we explain the reason for its fluctuate slope transition and review the correlation between noise behavior and photo effect mechanism.

Original language	English
Pages (from-to)	309-312
Number of pages	4
Journal	IEEE Journal of the Electron Devices Society
Volume	10
DOIs	https://doi.org/10.1109/JEDS.2022.3164082
State	Published - 2022

Keywords

Amorphous silicon
gap-type
noise
thin-film transistors (TFTs)

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10.1109/JEDS.2022.3164082

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title = "The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination",

abstract = "Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) used as photo sensor has been reported in previous literature. However, the noise behavior of gap-type a-Si TFT is not inspected yet. Therefore, we investigate the noise response of the gap-type a-Si TFT under illumination in this paper. We compare the difference between the results of the gap-type and the conventional-type TFTs. In addition, we analyze it including the perspectives of power spectrum, integral power spectrum, Hooge parameter, fluctuate slope. Finally, we explain the reason for its fluctuate slope transition and review the correlation between noise behavior and photo effect mechanism.",

keywords = "Amorphous silicon, gap-type, noise, thin-film transistors (TFTs)",

author = "Tai, {Ya Hsiang} and Yuan, {Yi Cheng} and Tu, {Cheng Che} and Wang, {Pin Chun}",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2022",

doi = "10.1109/JEDS.2022.3164082",

language = "English",

volume = "10",

pages = "309--312",

journal = "IEEE Journal of the Electron Devices Society",

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T1 - The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination

AU - Tai, Ya Hsiang

AU - Yuan, Yi Cheng

AU - Tu, Cheng Che

AU - Wang, Pin Chun

PY - 2022

Y1 - 2022

N2 - Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) used as photo sensor has been reported in previous literature. However, the noise behavior of gap-type a-Si TFT is not inspected yet. Therefore, we investigate the noise response of the gap-type a-Si TFT under illumination in this paper. We compare the difference between the results of the gap-type and the conventional-type TFTs. In addition, we analyze it including the perspectives of power spectrum, integral power spectrum, Hooge parameter, fluctuate slope. Finally, we explain the reason for its fluctuate slope transition and review the correlation between noise behavior and photo effect mechanism.

AB - Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) used as photo sensor has been reported in previous literature. However, the noise behavior of gap-type a-Si TFT is not inspected yet. Therefore, we investigate the noise response of the gap-type a-Si TFT under illumination in this paper. We compare the difference between the results of the gap-type and the conventional-type TFTs. In addition, we analyze it including the perspectives of power spectrum, integral power spectrum, Hooge parameter, fluctuate slope. Finally, we explain the reason for its fluctuate slope transition and review the correlation between noise behavior and photo effect mechanism.

KW - Amorphous silicon

KW - gap-type

KW - noise

KW - thin-film transistors (TFTs)

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U2 - 10.1109/JEDS.2022.3164082

DO - 10.1109/JEDS.2022.3164082

M3 - Article

AN - SCOPUS:85127502719

SN - 2168-6734

VL - 10

SP - 309

EP - 312

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

ER -

The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination

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