Abstract
This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-chargesheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.
Original language | English |
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Pages (from-to) | 13-16 |
Number of pages | 4 |
Journal | Proceedings of the Custom Integrated Circuits Conference |
DOIs | |
State | Published - 2004 |
Event | Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, CICC - Orlando, FL, United States Duration: 3 Oct 2004 → 6 Oct 2004 |