TY - JOUR
T1 - The New General Realization Theory of FET-Like Integrated Voltage-Controlled Negative Differential Resistance Devices
AU - Wu, Chung-Yu
AU - Wu, Ching Yuan
PY - 1981/5
Y1 - 1981/5
N2 - A new general realization theory of FET-like voltage-controlled negative differential resistance device is presented. A feedback-transfer model (VIM) of the FET, which contains four different kinds of feedback connections and their own mathematical conditions, is set up. Based on this model, a general simple realization technique is explored. Using this technique many negative differential resistance FET-like integrated devices either new or published are generated, and their integrated circuit configurations and basic properties are studied and discussed. Application example for a specific device is demonstrated, which substantiates the exactness of the proposed theory.
AB - A new general realization theory of FET-like voltage-controlled negative differential resistance device is presented. A feedback-transfer model (VIM) of the FET, which contains four different kinds of feedback connections and their own mathematical conditions, is set up. Based on this model, a general simple realization technique is explored. Using this technique many negative differential resistance FET-like integrated devices either new or published are generated, and their integrated circuit configurations and basic properties are studied and discussed. Application example for a specific device is demonstrated, which substantiates the exactness of the proposed theory.
UR - http://www.scopus.com/inward/record.url?scp=0019571705&partnerID=8YFLogxK
U2 - 10.1109/TCS.1981.1085002
DO - 10.1109/TCS.1981.1085002
M3 - Article
AN - SCOPUS:0019571705
VL - 28
SP - 382
EP - 390
JO - IEEE Transactions on Circuits and Systems I: Regular Papers
JF - IEEE Transactions on Circuits and Systems I: Regular Papers
SN - 1549-8328
IS - 5
ER -