The New General Realization Theory of FET-Like Integrated Voltage-Controlled Negative Differential Resistance Devices

Chung-Yu Wu, Ching Yuan Wu

    Research output: Contribution to journalArticlepeer-review

    7 Scopus citations

    Abstract

    A new general realization theory of FET-like voltage-controlled negative differential resistance device is presented. A feedback-transfer model (VIM) of the FET, which contains four different kinds of feedback connections and their own mathematical conditions, is set up. Based on this model, a general simple realization technique is explored. Using this technique many negative differential resistance FET-like integrated devices either new or published are generated, and their integrated circuit configurations and basic properties are studied and discussed. Application example for a specific device is demonstrated, which substantiates the exactness of the proposed theory.

    Original languageEnglish
    Pages (from-to)382-390
    Number of pages9
    JournalIEEE transactions on circuits and systems
    Volume28
    Issue number5
    DOIs
    StatePublished - May 1981

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