The low-temperature characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures

Meng Hwang Liu*, Yeong Her Wang, Mau Phon Houng, Jenn-Fang Chen, Alfred Y. Cho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures are investigated. In addition to the main negative differential resistance peaks, kinks or small peaks can be clearly seen, especially at low temperature. The effects of the heavy-hole states are expected to play an important role. Here, a k· p model incorporating the coupling effects of the heavy-hole states is used. It is found that the kinks and small peaks are the results of heavy-hole coupling. Furthermore, the electron distribution in the InAs emitter also contributes to the phenomena observed in the low-temperature characteristics.

Original languageEnglish
Pages (from-to)1178-1183
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number2S
DOIs
StatePublished - Feb 1996

Keywords

  • Heavy-hole coupling
  • Interband
  • Negative differential resistance
  • Resonant
  • Tunneling

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