The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes

Tien Yu Wang, Wei Chih Lai*, Qiao Ju Xie, Shun Hao Yang, Sheng Po Chang, Cheng Huang Kuo, Jinn Kong Sheu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Chemical Compounds

Engineering & Materials Science