The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes

Tien Yu Wang; Wei Chih Lai; Qiao Ju Xie; Shun Hao Yang; Sheng Po Chang; Cheng Huang Kuo; Jinn Kong Sheu

doi:10.1039/d2ra07368d

The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes

Tien Yu Wang, Wei Chih Lai^*, Qiao Ju Xie, Shun Hao Yang, Sheng Po Chang, Cheng Huang Kuo, Jinn Kong Sheu

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The growth conditions of the AlGaN barrier in AlGaN/AlGaN deep ultra-violet (DUV) multiple quantum wells (MQWs) have crucial influences on the light output power of DUV light-emitting diodes (LEDs). The reduction of the AlGaN barrier growth rate improved the qualities of AlGaN/AlGaN MQWs, such as surface roughness and defects. The light output power enhancement could reach 83% when the AlGaN barrier growth rate was reduced from 900 nm h⁻¹ to 200 nm h⁻¹. In addition to the light output power enhancement, lowering the AlGaN barrier growth rate altered the far-field emission patterns of the DUV LEDs and increased the degree of polarization in the DUV LEDs. The enhanced transverse electric polarized emission indicates that the strain in AlGaN/AlGaN MQWs was modified by lowering the AlGaN barrier growth rate.

Original language	English
Pages (from-to)	5437-5443
Number of pages	7
Journal	RSC Advances
Volume	13
Issue number	8
DOIs	https://doi.org/10.1039/d2ra07368d
State	Published - 13 Feb 2023

Access to Document

10.1039/d2ra07368d

Cite this

@article{66bcd1b6d9824ef084cfdb8f92653240,

title = "The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes",

abstract = "The growth conditions of the AlGaN barrier in AlGaN/AlGaN deep ultra-violet (DUV) multiple quantum wells (MQWs) have crucial influences on the light output power of DUV light-emitting diodes (LEDs). The reduction of the AlGaN barrier growth rate improved the qualities of AlGaN/AlGaN MQWs, such as surface roughness and defects. The light output power enhancement could reach 83% when the AlGaN barrier growth rate was reduced from 900 nm h−1 to 200 nm h−1. In addition to the light output power enhancement, lowering the AlGaN barrier growth rate altered the far-field emission patterns of the DUV LEDs and increased the degree of polarization in the DUV LEDs. The enhanced transverse electric polarized emission indicates that the strain in AlGaN/AlGaN MQWs was modified by lowering the AlGaN barrier growth rate.",

author = "Wang, {Tien Yu} and Lai, {Wei Chih} and Xie, {Qiao Ju} and Yang, {Shun Hao} and Chang, {Sheng Po} and Kuo, {Cheng Huang} and Sheu, {Jinn Kong}",

note = "Publisher Copyright: {\textcopyright} 2023 The Royal Society of Chemistry.",

year = "2023",

month = feb,

day = "13",

doi = "10.1039/d2ra07368d",

language = "English",

volume = "13",

pages = "5437--5443",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "8",

}

TY - JOUR

T1 - The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes

AU - Wang, Tien Yu

AU - Lai, Wei Chih

AU - Xie, Qiao Ju

AU - Yang, Shun Hao

AU - Chang, Sheng Po

AU - Kuo, Cheng Huang

AU - Sheu, Jinn Kong

PY - 2023/2/13

Y1 - 2023/2/13

N2 - The growth conditions of the AlGaN barrier in AlGaN/AlGaN deep ultra-violet (DUV) multiple quantum wells (MQWs) have crucial influences on the light output power of DUV light-emitting diodes (LEDs). The reduction of the AlGaN barrier growth rate improved the qualities of AlGaN/AlGaN MQWs, such as surface roughness and defects. The light output power enhancement could reach 83% when the AlGaN barrier growth rate was reduced from 900 nm h−1 to 200 nm h−1. In addition to the light output power enhancement, lowering the AlGaN barrier growth rate altered the far-field emission patterns of the DUV LEDs and increased the degree of polarization in the DUV LEDs. The enhanced transverse electric polarized emission indicates that the strain in AlGaN/AlGaN MQWs was modified by lowering the AlGaN barrier growth rate.

AB - The growth conditions of the AlGaN barrier in AlGaN/AlGaN deep ultra-violet (DUV) multiple quantum wells (MQWs) have crucial influences on the light output power of DUV light-emitting diodes (LEDs). The reduction of the AlGaN barrier growth rate improved the qualities of AlGaN/AlGaN MQWs, such as surface roughness and defects. The light output power enhancement could reach 83% when the AlGaN barrier growth rate was reduced from 900 nm h−1 to 200 nm h−1. In addition to the light output power enhancement, lowering the AlGaN barrier growth rate altered the far-field emission patterns of the DUV LEDs and increased the degree of polarization in the DUV LEDs. The enhanced transverse electric polarized emission indicates that the strain in AlGaN/AlGaN MQWs was modified by lowering the AlGaN barrier growth rate.

UR - http://www.scopus.com/inward/record.url?scp=85148622707&partnerID=8YFLogxK

U2 - 10.1039/d2ra07368d

DO - 10.1039/d2ra07368d

M3 - Article

AN - SCOPUS:85148622707

SN - 2046-2069

VL - 13

SP - 5437

EP - 5443

JO - RSC Advances

JF - RSC Advances

IS - 8

ER -

The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this