The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes

Tien Yu Wang, Wei Chih Lai*, Qiao Ju Xie, Shun Hao Yang, Sheng Po Chang, Cheng Huang Kuo, Jinn Kong Sheu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The growth conditions of the AlGaN barrier in AlGaN/AlGaN deep ultra-violet (DUV) multiple quantum wells (MQWs) have crucial influences on the light output power of DUV light-emitting diodes (LEDs). The reduction of the AlGaN barrier growth rate improved the qualities of AlGaN/AlGaN MQWs, such as surface roughness and defects. The light output power enhancement could reach 83% when the AlGaN barrier growth rate was reduced from 900 nm h−1 to 200 nm h−1. In addition to the light output power enhancement, lowering the AlGaN barrier growth rate altered the far-field emission patterns of the DUV LEDs and increased the degree of polarization in the DUV LEDs. The enhanced transverse electric polarized emission indicates that the strain in AlGaN/AlGaN MQWs was modified by lowering the AlGaN barrier growth rate.

Original languageEnglish
Pages (from-to)5437-5443
Number of pages7
JournalRSC Advances
Volume13
Issue number8
DOIs
StatePublished - 13 Feb 2023

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