The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors

Ruofan Fu; Jianwen Yang; Wei Chiao Chang; Wei Cheng Chang; Chien Min Chang; Dong Lin; Qun Zhang; Po-Tsun Liu; Han Ping D. Shieh

doi:10.1002/pssa.201700785

The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors

Ruofan Fu, Jianwen Yang, Wei Chiao Chang, Wei Cheng Chang, Chien Min Chang, Dong Lin, Qun Zhang^*, Po-Tsun Liu, Han Ping D. Shieh

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this paper, the influence of annealing temperature on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2 cm ² V ⁻¹ s ⁻¹ at 300 °C, along with an on/off current ratio of 1.6 × 10 ⁸ . Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4 V after being stressed for 1500 s. This result can be ascribed to the decrease in electrons captured by the deep defects in a-IZWO TFTs.

Original language	English
Article number	1700785
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	215
Issue number	6
DOIs	https://doi.org/10.1002/pssa.201700785
State	Published - 21 Mar 2018

Keywords

annealing
indium-zinc-tungsten-oxide
positive bias stress
thin-film transistors

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10.1002/pssa.201700785

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title = "The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors",

abstract = " In this paper, the influence of annealing temperature on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2 cm 2 V −1 s −1 at 300 °C, along with an on/off current ratio of 1.6 × 10 8 . Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4 V after being stressed for 1500 s. This result can be ascribed to the decrease in electrons captured by the deep defects in a-IZWO TFTs. ",

keywords = "annealing, indium-zinc-tungsten-oxide, positive bias stress, thin-film transistors",

author = "Ruofan Fu and Jianwen Yang and Chang, {Wei Chiao} and Chang, {Wei Cheng} and Chang, {Chien Min} and Dong Lin and Qun Zhang and Po-Tsun Liu and Shieh, {Han Ping D.}",

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AU - Fu, Ruofan

AU - Yang, Jianwen

AU - Chang, Wei Chiao

AU - Chang, Wei Cheng

AU - Chang, Chien Min

AU - Lin, Dong

AU - Zhang, Qun

AU - Liu, Po-Tsun

AU - Shieh, Han Ping D.

PY - 2018/3/21

Y1 - 2018/3/21

N2 - In this paper, the influence of annealing temperature on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2 cm 2 V −1 s −1 at 300 °C, along with an on/off current ratio of 1.6 × 10 8 . Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4 V after being stressed for 1500 s. This result can be ascribed to the decrease in electrons captured by the deep defects in a-IZWO TFTs.

AB - In this paper, the influence of annealing temperature on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2 cm 2 V −1 s −1 at 300 °C, along with an on/off current ratio of 1.6 × 10 8 . Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4 V after being stressed for 1500 s. This result can be ascribed to the decrease in electrons captured by the deep defects in a-IZWO TFTs.

KW - annealing

KW - indium-zinc-tungsten-oxide

KW - positive bias stress

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The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors

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