Abstract
The photosensitivity of gap-gate type amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under visible light has been studied. With the very same process, the gap-type TFTs can be made into sensing array with the conventional ones. As a sensing device, the high ratio of photo and dark current and the steady leakage current provide the better signal to noise.
Original language | English |
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Pages (from-to) | 1197-1200 |
Number of pages | 4 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 49 |
Issue number | 1 |
DOIs | |
State | Published - 2018 |
Event | SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States Duration: 20 May 2018 → 25 May 2018 |
Keywords
- Amorphous Indium Gallium Zinc Oxide (a-IGZO)
- Gap-type Structure
- Light Sensor
- Thin Film Transistors (TFT)