The improved photosensitivity of amorphous In-Ga-Zn-O TFTs with gap-type structure

Po Chun Chan, Ya-Hsiang Tai, Han Wen Liu

Research output: Contribution to journalConference articlepeer-review

Abstract

The photosensitivity of gap-gate type amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under visible light has been studied. With the very same process, the gap-type TFTs can be made into sensing array with the conventional ones. As a sensing device, the high ratio of photo and dark current and the steady leakage current provide the better signal to noise.

Original languageEnglish
Pages (from-to)1197-1200
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume49
Issue number1
DOIs
StatePublished - 2018
EventSID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States
Duration: 20 May 201825 May 2018

Keywords

  • Amorphous Indium Gallium Zinc Oxide (a-IGZO)
  • Gap-type Structure
  • Light Sensor
  • Thin Film Transistors (TFT)

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