The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain

Kuo Liang Yeh*, Wei Lun Hong, Jyh-Chyurn Guo

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    The impact of uni-axial strain from embedded SiGe in recessed SID (e-SiGe) and Ge implanted SID (i-SiGe) on effective mobility μeff gate leakage current, short channel effect (SeE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior μeff enhancement but lead to worse SeE and LFN. The i-SiGe can reduce SeE and LFN but suffers limited !lefT improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance.

    Original languageEnglish
    Title of host publication2010 IEEE MTT-S International Microwave Symposium, MTT 2010
    Pages316-319
    Number of pages4
    DOIs
    StatePublished - 15 Oct 2010
    Event2010 IEEE MTT-S International Microwave Symposium, MTT 2010 - Anaheim, CA, United States
    Duration: 23 May 201028 May 2010

    Publication series

    NameIEEE MTT-S International Microwave Symposium Digest
    ISSN (Print)0149-645X

    Conference

    Conference2010 IEEE MTT-S International Microwave Symposium, MTT 2010
    Country/TerritoryUnited States
    CityAnaheim, CA
    Period23/05/1028/05/10

    Keywords

    • Body bias
    • Low frequency noise
    • Mobility fluctuation
    • pMOSFET
    • SiGe
    • Strain
    • Uni-axial

    Fingerprint

    Dive into the research topics of 'The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain'. Together they form a unique fingerprint.

    Cite this