The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots

S. A. Blokhin*, A. V. Sakharov, N. A. Maleev, M. M. Kulagina, Yu M. Shernyakov, I. I. Novikov, N. Yu Gordeev, M. V. Maximov, A. G. Kuzmenkov, V. M. Ustinov, N. N. Ledentsov, A. R. Kovsh, S. S. Mikhrin, Kuo-Jui Lin, J. Y. Chi

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

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    Abstract

    The laser characteristics of 0.98 νm vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots (QDs) were studied in a broad temperature range. Devices demonstrated low internal optical losses, high differential efficiency and relatively small resistances due to the QD active region together with an optimal design of doped distributed Bragg reflectors. It is found that the temperature dependence of threshold current and differential efficiency depends not only on the temperature sensitivity of the active region, but also on the lineshape of the gain curve and spectral misalignment between the gain maximum and cavity mode. A simple method of estimation of gain-cavity detuning has been proposed.

    Original languageEnglish
    Article number005
    Pages (from-to)203-208
    Number of pages6
    JournalSemiconductor Science and Technology
    Volume22
    Issue number3
    DOIs
    StatePublished - 19 Jan 2007

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