@inproceedings{eca6d2c7d1ff48589b0d8977521cb853,
title = "The Impact of Strain and Layout Dependent Effects on High Frequency Performance and Low Frequency Noise in Nanoscale Devices",
abstract = "SiC strained nMOSFETs with sub-35 nm gate length can realize superior fT above 400GHz attributed to more than 20% enhancement of the mobility and transconductance. This super-400 GHz fT makes SiC strained nMOS a premium device for mm-wave CMOS circuits design. However, the SiC nMOSFETs reveal a dramatic increase of flicker noise and random telegraph noise (RTN), which may cause worse phase noise and detrimental impact on CMOS oscillator stability. The complex RTN features abnormally long capture and emission time constants (τc and τe) and suggests new mechanism responsible for the anomalously slow trapping and detrapping, due to a significant increase of the relaxation energy from SiC strain. This critical trade-off between high frequency performance and low frequency noise should be considered seriously for an appropriate deployment of high mobility devices and optimization adapted to RF and analog circuits.",
keywords = "SiC strain, capture, cut-off frequency, elastic tunneling, electron-phonon coupling, emission, flicker noise, mobility, phase noise, random telegraph noise",
author = "Guo, {Jyh Chyurn} and Chang, {Chih Shiang}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 15th IEEE International Conference on ASIC, ASICON 2023 ; Conference date: 24-10-2023 Through 27-10-2023",
year = "2023",
doi = "10.1109/ASICON58565.2023.10396037",
language = "English",
series = "Proceedings of International Conference on ASIC",
publisher = "IEEE Computer Society",
editor = "Fan Ye and Ting-Ao Tang",
booktitle = "Proceedings of 2023 IEEE 15th International Conference on ASIC, ASICON 2023",
address = "美國",
}