The impact of narrow width effects on high frequency performance and noise in 35nm multi-finger n-MOSFETs

Kuo Liang Yeh, Chih Shiang Chang, Jyh-Chyurn Guo*

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations

    Abstract

    The impact of narrow width effects on high frequency performance parameters like f T , f MAX , and RF noise in 35nm multi-finger n-MOSFETs is investigated in this paper. Multi-OD devices with extremely narrow width and fixed finger number (N F ) reveal higher R g and C gg , which lead to the penalty in f T , f MAX , and NF min . On the other hand, narrow-OD MOSFET with larger N F can yield lower R g and higher f MAX . However, these narrow-OD devices even with lower R g suffer lower f T and higher NF min . The mechanisms responsible for narrow width effects on f T , f MAX , and noise parameters will be addressed to provide an important guideline of MOSFET layout for RF circuits design using nanoscale CMOS technology.

    Original languageEnglish
    Title of host publication2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Digest of Papers
    Pages355-358
    Number of pages4
    DOIs
    StatePublished - 28 Sep 2012
    Event2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Montreal, QC, Canada
    Duration: 17 Jun 201219 Jun 2012

    Publication series

    NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
    ISSN (Print)1529-2517

    Conference

    Conference2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012
    Country/TerritoryCanada
    CityMontreal, QC
    Period17/06/1219/06/12

    Keywords

    • NF
    • Nanoscale CMOS
    • f
    • f
    • high frequency
    • multi-finger
    • narrow width

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