The Impact of Nano CMOS Device Scaling on High Frequency Performance and Optimization Principle for fMAXBoost

Adhi Cahyo Wijaya; Jinq Min Lin; Jyh Chyurn Guo

doi:10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134106

The Impact of Nano CMOS Device Scaling on High Frequency Performance and Optimization Principle for f_MAXBoost

Adhi Cahyo Wijaya, Jinq Min Lin, Jyh Chyurn Guo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, the impact of nano CMOS technology scaling on the high frequency performance aimed at super-350 GHz fT and fMAX has been investigated. An extensive comparison of multi-finger (MF) nMOSFETs designed and fabricated in 90-nm and 40-nm technologies indicate 71∼128% boost of fT but only 11∼49% increase of fMAX in three MF nMOSFETs when scaling from 90-nm to 40-nm technologies. The undesired increase of gate impedance and output conductance caused by device scaling appear as the root causes, which limit the enhancement of fMAX. This important finding provides a useful guideline for the simultaneous boost and optimization of fT and fMAX aimed at mm-Wave and sub-THz CMOS circuits design.

Original language	English
Title of host publication	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350334166
DOIs	https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134106
State	Published - 2023
Event	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan Duration: 17 Apr 2023 → 20 Apr 2023

Publication series

Name	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
Country/Territory	Taiwan
City	Hsinchu
Period	17/04/23 → 20/04/23

Access to Document

10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134106

Cite this

Wijaya, A. C., Lin, J. M., & Guo, J. C. (2023). The Impact of Nano CMOS Device Scaling on High Frequency Performance and Optimization Principle for f_MAXBoost. In 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134106

Wijaya, Adhi Cahyo ; Lin, Jinq Min ; Guo, Jyh Chyurn. / The Impact of Nano CMOS Device Scaling on High Frequency Performance and Optimization Principle for f_MAXBoost. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

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title = "The Impact of Nano CMOS Device Scaling on High Frequency Performance and Optimization Principle for fMAXBoost",

abstract = "In this paper, the impact of nano CMOS technology scaling on the high frequency performance aimed at super-350 GHz fT and fMAX has been investigated. An extensive comparison of multi-finger (MF) nMOSFETs designed and fabricated in 90-nm and 40-nm technologies indicate 71∼128% boost of fT but only 11∼49% increase of fMAX in three MF nMOSFETs when scaling from 90-nm to 40-nm technologies. The undesired increase of gate impedance and output conductance caused by device scaling appear as the root causes, which limit the enhancement of fMAX. This important finding provides a useful guideline for the simultaneous boost and optimization of fT and fMAX aimed at mm-Wave and sub-THz CMOS circuits design.",

author = "Wijaya, {Adhi Cahyo} and Lin, {Jinq Min} and Guo, {Jyh Chyurn}",

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Wijaya, AC, Lin, JM & Guo, JC 2023, The Impact of Nano CMOS Device Scaling on High Frequency Performance and Optimization Principle for f_MAXBoost. in 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023, Hsinchu, Taiwan, 17/04/23. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134106

The Impact of Nano CMOS Device Scaling on High Frequency Performance and Optimization Principle for f_MAXBoost. / Wijaya, Adhi Cahyo; Lin, Jinq Min; Guo, Jyh Chyurn.
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - In this paper, the impact of nano CMOS technology scaling on the high frequency performance aimed at super-350 GHz fT and fMAX has been investigated. An extensive comparison of multi-finger (MF) nMOSFETs designed and fabricated in 90-nm and 40-nm technologies indicate 71∼128% boost of fT but only 11∼49% increase of fMAX in three MF nMOSFETs when scaling from 90-nm to 40-nm technologies. The undesired increase of gate impedance and output conductance caused by device scaling appear as the root causes, which limit the enhancement of fMAX. This important finding provides a useful guideline for the simultaneous boost and optimization of fT and fMAX aimed at mm-Wave and sub-THz CMOS circuits design.

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Wijaya AC, Lin JM, Guo JC. The Impact of Nano CMOS Device Scaling on High Frequency Performance and Optimization Principle for f_MAXBoost. In 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). doi: 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134106