The impact of MOSFET layout dependent stress on high frequency characteristics and flicker noise

Kuo Liang Yeh*, Chih You Ku, Jyh-Chyurn Guo

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations

    Abstract

    Layout dependent stress in 90 nm MOSFET and its impact on high frequency performance and flicker noise has been investigated Donut MOSFETs were created to eliminate the transverse stress from shallow trench isolation (STI). Both NMOS and PMOS can benefit from the donut layout in terms of higher effective mobility μeff and cutoff frequency fT, as well as lower flicker noise. The measured flicker noise follows number fluctuation model for NMOS and mobility fluctuation model for PMOS, respectively. The reduction of flicker noise suggests the reduction of STI generated traps and the suppression of mobility fluctuation due to eliminated transverse stress using donut structure.

    Original languageEnglish
    Title of host publicationProceedings of the 2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010
    Pages577-580
    Number of pages4
    DOIs
    StatePublished - 16 Jul 2010
    Event2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010 - Anaheim, CA, United States
    Duration: 23 May 201025 May 2010

    Publication series

    NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
    ISSN (Print)1529-2517

    Conference

    Conference2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010
    Country/TerritoryUnited States
    CityAnaheim, CA
    Period23/05/1025/05/10

    Keywords

    • Donut
    • Flicker noise
    • Mobility
    • Shallow-trench isolation (STI)
    • Stress

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