The impact of layout dependent stress and gate resistance on high frequency performance and noise in multifinger and donut MOSFETs

Chih You Ku, Kuo Ling Yeh, Jyh-Chyurn Guo*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

The impact of STI stress on mobility and resulted transconductance (g m) degradation appear as a penalty of multi-finger devices for RF and analog design. Donut device layout is proposed to eliminate the STI transverse stress and achieve higher gm. Both NMOS and PMOS can benefit from the donut layout, with higher cut-off frequency (fT). However, the layout dependence of gm and gate resistance (Rg) becomes a critical trade-off in determining high frequency performance other than f T, such as maximum oscillation frequency (fmax) and RF noise. In this paper, a comparison between multi-finger and donut MOSFETs in terms of fT, fmax, and NFmin can provide a useful guideline of device layout for RF design using nanoscale CMOS technology.

Original languageEnglish
Title of host publication2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
DOIs
StatePublished - 1 Dec 2013
Event2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States
Duration: 2 Jun 20137 Jun 2013

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
Country/TerritoryUnited States
CitySeattle, WA
Period2/06/137/06/13

Keywords

  • Donut
  • F
  • F
  • High frequency
  • Layout
  • Multi-finger
  • Nanoscale CMOS
  • NF
  • Noise
  • Stress

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