The impact of inner pickup on ESD robustness of multi-finger NMOS in nanoscale CMOS technology

Ming-Dou Ker; Hsin Chyh Hsu

doi:10.1109/RELPHY.2006.251297

The impact of inner pickup on ESD robustness of multi-finger NMOS in nanoscale CMOS technology

Ming-Dou Ker^*, Hsin Chyh Hsu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

The impact of pickup structure on ESD robustness of multi-finger MOSFET devices in the nanoscale CMOS process is investigated in this work with 1.2-V and 2.5-V devices in a 130-nm CMOS process. The multi-finger MOSFET device without the pickup structure inserted into its source region can sustain a much higher ESD level and more compact layout area for I/O cells.

Original language	English
Title of host publication	2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Pages	631-632
Number of pages	2
DOIs	https://doi.org/10.1109/RELPHY.2006.251297
State	Published - 1 Dec 2006
Event	44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States Duration: 26 Mar 2006 → 30 Mar 2006

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
Country/Territory	United States
City	San Jose, CA
Period	26/03/06 → 30/03/06

Keywords

Electrostatic discharge (ESD)
Layout
Multi-finger MOSFET
Pickup structure

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10.1109/RELPHY.2006.251297

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title = "The impact of inner pickup on ESD robustness of multi-finger NMOS in nanoscale CMOS technology",

abstract = "The impact of pickup structure on ESD robustness of multi-finger MOSFET devices in the nanoscale CMOS process is investigated in this work with 1.2-V and 2.5-V devices in a 130-nm CMOS process. The multi-finger MOSFET device without the pickup structure inserted into its source region can sustain a much higher ESD level and more compact layout area for I/O cells.",

keywords = "Electrostatic discharge (ESD), Layout, Multi-finger MOSFET, Pickup structure",

author = "Ming-Dou Ker and Hsu, {Hsin Chyh}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/RELPHY.2006.251297",

language = "English",

isbn = "0780394992",

series = "IEEE International Reliability Physics Symposium Proceedings",

pages = "631--632",

booktitle = "2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual",

note = "44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 ; Conference date: 26-03-2006 Through 30-03-2006",

}

Ker, M-D & Hsu, HC 2006, The impact of inner pickup on ESD robustness of multi-finger NMOS in nanoscale CMOS technology. in 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual., 4017238, IEEE International Reliability Physics Symposium Proceedings, pp. 631-632, 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006, San Jose, CA, United States, 26/03/06. https://doi.org/10.1109/RELPHY.2006.251297

The impact of inner pickup on ESD robustness of multi-finger NMOS in nanoscale CMOS technology. / Ker, Ming-Dou; Hsu, Hsin Chyh.
2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. 2006. p. 631-632 4017238 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hsu, Hsin Chyh

PY - 2006/12/1

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N2 - The impact of pickup structure on ESD robustness of multi-finger MOSFET devices in the nanoscale CMOS process is investigated in this work with 1.2-V and 2.5-V devices in a 130-nm CMOS process. The multi-finger MOSFET device without the pickup structure inserted into its source region can sustain a much higher ESD level and more compact layout area for I/O cells.

AB - The impact of pickup structure on ESD robustness of multi-finger MOSFET devices in the nanoscale CMOS process is investigated in this work with 1.2-V and 2.5-V devices in a 130-nm CMOS process. The multi-finger MOSFET device without the pickup structure inserted into its source region can sustain a much higher ESD level and more compact layout area for I/O cells.

KW - Electrostatic discharge (ESD)

KW - Layout

KW - Multi-finger MOSFET

KW - Pickup structure

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T2 - 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006

Y2 - 26 March 2006 through 30 March 2006

ER -

The impact of inner pickup on ESD robustness of multi-finger NMOS in nanoscale CMOS technology

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Keywords

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