The impact of active layer pre-treatment on bias stress stability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistor

Wan Fang Chung*, Ting Chang Chang, Hung Wei Li, Yu Chun Chen, Iue Hen Li, Tseung-Yuen Tseng, Ya-Hsiang Tai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We have investigated the gate bias stress-induced instability on the electrical properties with different pre-treatments for sol-gel derived amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The device with illuminating and heating pretreatments under the positive/negative gate bias stress in vacuum had the smallest threshold voltage shift as the stress duration increased, while the device with oxygen gas pre-treatment exhibited an obvious variation. These electrical instabilities were ascribed to the charge trapping in the gate insulator and the oxygen/water adsorption on the active layer. It indicates that the specific pre-treatment for the a-IGZO film can improve the device stability. It also provides the important information for the subsequent passivation process concerning the pre-treatment of the active layer.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Pages273-281
Number of pages9
Edition6
DOIs
StatePublished - 1 Dec 2011
EventState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States
Duration: 9 Oct 201114 Oct 2011

Publication series

NameECS Transactions
Number6
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
Country/TerritoryUnited States
CityBoston, MA
Period9/10/1114/10/11

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