The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN

Cheng Hung Shih; Ikai Lo; Shuo Ting You; Cheng Da Tsai; Bae Heng Tseng; Yun Feng Chen; Chiao Hsin Chen; Chuo Han Lee; Wei-I Lee; Gary Z.L. Hsu

doi:10.1063/1.4904030

The growth of heteroepitaxial CuInSe₂ on free-standing N-polar GaN

Cheng Hung Shih^*, Ikai Lo, Shuo Ting You, Cheng Da Tsai, Bae Heng Tseng, Yun Feng Chen, Chiao Hsin Chen, Chuo Han Lee, Wei-I Lee, Gary Z.L. Hsu

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report that chalcopyrite CuInSe₂ thin films were grown on free-standing N-polar GaN (0001) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe₂ thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe₂ (112) film on N-polar GaN. Microstructure analysis of the CuInSe₂ showed that the large lattice mismatch (28.5%) between CuInSe₂ and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe₂ and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe₂ thin film, which exhibits a promising potential for optoelectronic applications.

Original language	English
Article number	127120
Journal	AIP Advances
Volume	4
Issue number	12
DOIs	https://doi.org/10.1063/1.4904030
State	Published - 1 Dec 2014

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title = "The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN",

abstract = "We report that chalcopyrite CuInSe2 thin films were grown on free-standing N-polar GaN (0001) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe2 thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe2 (112) film on N-polar GaN. Microstructure analysis of the CuInSe2 showed that the large lattice mismatch (28.5%) between CuInSe2 and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe2 and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe2 thin film, which exhibits a promising potential for optoelectronic applications.",

author = "Shih, {Cheng Hung} and Ikai Lo and You, {Shuo Ting} and Tsai, {Cheng Da} and Tseng, {Bae Heng} and Chen, {Yun Feng} and Chen, {Chiao Hsin} and Lee, {Chuo Han} and Wei-I Lee and Hsu, {Gary Z.L.}",

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doi = "10.1063/1.4904030",

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T1 - The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN

AU - Shih, Cheng Hung

AU - Lo, Ikai

AU - You, Shuo Ting

AU - Tsai, Cheng Da

AU - Tseng, Bae Heng

AU - Chen, Yun Feng

AU - Chen, Chiao Hsin

AU - Lee, Chuo Han

AU - Lee, Wei-I

AU - Hsu, Gary Z.L.

PY - 2014/12/1

Y1 - 2014/12/1

N2 - We report that chalcopyrite CuInSe2 thin films were grown on free-standing N-polar GaN (0001) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe2 thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe2 (112) film on N-polar GaN. Microstructure analysis of the CuInSe2 showed that the large lattice mismatch (28.5%) between CuInSe2 and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe2 and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe2 thin film, which exhibits a promising potential for optoelectronic applications.

AB - We report that chalcopyrite CuInSe2 thin films were grown on free-standing N-polar GaN (0001) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe2 thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe2 (112) film on N-polar GaN. Microstructure analysis of the CuInSe2 showed that the large lattice mismatch (28.5%) between CuInSe2 and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe2 and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe2 thin film, which exhibits a promising potential for optoelectronic applications.

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U2 - 10.1063/1.4904030

DO - 10.1063/1.4904030

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VL - 4

JO - AIP Advances

JF - AIP Advances

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M1 - 127120

ER -

The growth of heteroepitaxial CuInSe₂ on free-standing N-polar GaN

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