TY - JOUR
T1 - The formation of smooth facets on wet-etched patterned sapphire substrate
AU - Chen, Yu Chung
AU - Lin, Bo Wen
AU - Hsu, Wen Ching
AU - Wu, Yew-Chuhg
PY - 2014/2/17
Y1 - 2014/2/17
N2 - In this study, rectangle-shaped SiO2 hard masks with various orientations were employed to find various facets on wet-etched patterned sapphire substrate (PSS). Seven facets (A, B, B1,B2,D1,D and E) were observed after etching. The surfaces of A, B and E-facets were smooth. Their plane indexes were {1347}, {1014} and {1235}, respectively. On the other hand, the surfaces of Bi ,B2,Di and D2-facets were not smooth, with some ambiguous stripes, which were investigated by using "zigzag triangle" hard mask. A large triangle-mask was employed to investigate smooth facets and the GaN epitaxial behavior. It was found that most of the growth of zincblende GaN was initiated not from A and B-facets but E-facets.
AB - In this study, rectangle-shaped SiO2 hard masks with various orientations were employed to find various facets on wet-etched patterned sapphire substrate (PSS). Seven facets (A, B, B1,B2,D1,D and E) were observed after etching. The surfaces of A, B and E-facets were smooth. Their plane indexes were {1347}, {1014} and {1235}, respectively. On the other hand, the surfaces of Bi ,B2,Di and D2-facets were not smooth, with some ambiguous stripes, which were investigated by using "zigzag triangle" hard mask. A large triangle-mask was employed to investigate smooth facets and the GaN epitaxial behavior. It was found that most of the growth of zincblende GaN was initiated not from A and B-facets but E-facets.
UR - http://www.scopus.com/inward/record.url?scp=84893735516&partnerID=8YFLogxK
U2 - 10.1149/2.004402jss
DO - 10.1149/2.004402jss
M3 - Article
AN - SCOPUS:84893735516
VL - 3
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 2
ER -