@inproceedings{38c06e477de8482db80f2e0e5dbe5ec8,
title = "The Failure Mechanism of the Guard-Rings in Two Different Power Domains during the Latch-Up Test",
abstract = "The failure mechanism of latch-up in two different power domains for the high voltage (HV) output driver under the positive trigger current latch-up test is investigated. From the T-CAD, why the guard-rings (GRs) in two different power domains are damaged is found. It is caused by the conductivity modulation effect as the region between two power domains is triggered into the latch-up state. So, this region becomes an intrinsic region (resistor) to induce power short to power, resulting in the GR damage.",
keywords = "Bipolar CMOS DMOS (BCD), Guard-Ring, Latch-Up Test, Positive Trigger-Current",
author = "Lee, {Jian Hsing} and Lin, {Chih Hsuan} and Karuna Nidhi and Chen, {Chao Yang} and Jou, {Yeh Ning} and Ker, {Ming Dou}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022 ; Conference date: 18-07-2022 Through 21-07-2022",
year = "2022",
doi = "10.1109/IPFA55383.2022.9915775",
language = "English",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022",
address = "美國",
}