The fabrication and application of Ni-DNA nanowire-based nanoelectronic devices

Pang Chia Chang; Chia Yu Chang; Wen-Bin Jian; Chiun-Jye Yuan; Yu-Chang Chen; Chia-Ching Chang

doi:10.1007/s12274-019-2363-2

The fabrication and application of Ni-DNA nanowire-based nanoelectronic devices

Pang Chia Chang, Chia Yu Chang, Wen-Bin Jian^*, Chiun-Jye Yuan, Yu-Chang Chen, Chia-Ching Chang^*

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

8 Scopus citations

Abstract

DNA is a self-assembled, double stranded natural molecule that can chelate and align nickel ions between its base pairs. The fabrication of a DNA-guided nickel ion chain (Ni-DNA) device was successful, as indicated by the conducting currents exhibiting a Ni ion redox reaction-driven negative differential resistance effect, a property unique to mem-elements (1). The redox state of nickel ions in the Ni-DNA device is programmable by applying an external bias with different polarities and writing times (2). The multiple states of Ni-DNA-based memristive and memcapacitive systems were characterized (3). As such, the development of Ni-DNA nanowire device-based circuits in the near future is proposed.

Original language	English
Pages (from-to)	1293–1300
Number of pages	8
Journal	Nano Research
Volume	12
Issue number	6
DOIs	https://doi.org/10.1007/s12274-019-2363-2
State	Published - Jun 2019

Keywords

DNA-guided nickel ion chain (Ni-DNA)
memcapacitive system
memristive system
nanowire
negative differential resistance (NDR)

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10.1007/s12274-019-2363-2

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title = "The fabrication and application of Ni-DNA nanowire-based nanoelectronic devices",

abstract = "DNA is a self-assembled, double stranded natural molecule that can chelate and align nickel ions between its base pairs. The fabrication of a DNA-guided nickel ion chain (Ni-DNA) device was successful, as indicated by the conducting currents exhibiting a Ni ion redox reaction-driven negative differential resistance effect, a property unique to mem-elements (1). The redox state of nickel ions in the Ni-DNA device is programmable by applying an external bias with different polarities and writing times (2). The multiple states of Ni-DNA-based memristive and memcapacitive systems were characterized (3). As such, the development of Ni-DNA nanowire device-based circuits in the near future is proposed. ",

keywords = "DNA-guided nickel ion chain (Ni-DNA), memcapacitive system, memristive system, nanowire, negative differential resistance (NDR)",

author = "Chang, {Pang Chia} and Chang, {Chia Yu} and Wen-Bin Jian and Chiun-Jye Yuan and Yu-Chang Chen and Chia-Ching Chang",

note = "Publisher Copyright: {\textcopyright} 2019, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.",

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doi = "10.1007/s12274-019-2363-2",

language = "English",

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publisher = "Tsinghua University Press",

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T1 - The fabrication and application of Ni-DNA nanowire-based nanoelectronic devices

AU - Chang, Pang Chia

AU - Chang, Chia Yu

AU - Jian, Wen-Bin

AU - Yuan, Chiun-Jye

AU - Chen, Yu-Chang

AU - Chang, Chia-Ching

PY - 2019/6

Y1 - 2019/6

N2 - DNA is a self-assembled, double stranded natural molecule that can chelate and align nickel ions between its base pairs. The fabrication of a DNA-guided nickel ion chain (Ni-DNA) device was successful, as indicated by the conducting currents exhibiting a Ni ion redox reaction-driven negative differential resistance effect, a property unique to mem-elements (1). The redox state of nickel ions in the Ni-DNA device is programmable by applying an external bias with different polarities and writing times (2). The multiple states of Ni-DNA-based memristive and memcapacitive systems were characterized (3). As such, the development of Ni-DNA nanowire device-based circuits in the near future is proposed.

AB - DNA is a self-assembled, double stranded natural molecule that can chelate and align nickel ions between its base pairs. The fabrication of a DNA-guided nickel ion chain (Ni-DNA) device was successful, as indicated by the conducting currents exhibiting a Ni ion redox reaction-driven negative differential resistance effect, a property unique to mem-elements (1). The redox state of nickel ions in the Ni-DNA device is programmable by applying an external bias with different polarities and writing times (2). The multiple states of Ni-DNA-based memristive and memcapacitive systems were characterized (3). As such, the development of Ni-DNA nanowire device-based circuits in the near future is proposed.

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KW - memcapacitive system

KW - memristive system

KW - nanowire

KW - negative differential resistance (NDR)

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DO - 10.1007/s12274-019-2363-2

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VL - 12

SP - 1293

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JO - Nano Research

JF - Nano Research

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The fabrication and application of Ni-DNA nanowire-based nanoelectronic devices

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Keywords

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