The ellipsometric measurements on SiO2 by intensity ratio technique

Yu Faye Chao*, C. S. Wei, W. C. Lee, S. C. Lin, Tien-Sheng Chao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


A PSA photometric ellipsometric technique is used to measure the ellipsometric parameters, ψ and Δ. Taking intensity ratios of A = I(π/4+dp,dA)/I(π4+dp/,π2+dA) and B = I(-π/4+dp,dA)/I(-π/4+dp,π/2+dA) to their first order approximation under small azimuth deviations of polarizer (dp) and analyzer (dA), we find that at fixed dA these two ratios have opposite gradient with respect to dp and intersect to each other at a special dp where A= B EQ tan2ψ, and the position of this dp is linearly related to cos Δ. For comparison, ψ and Δ of a SiO2/Si thin film are measured by conventional null ellipsometry and intensity ratio technique. An higher percentage error on Δ is expected for this PSA system. The source of errors will be discussed.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsDennis H. Goldstein, David B. Chenault
PublisherSociety of Photo-Optical Instrumentation Engineers
Number of pages10
ISBN (Print)0819415898
StatePublished - 1 Dec 1994
EventPolarization Analysis and Measurement II - San Diego, CA, USA
Duration: 25 Jul 199427 Jul 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferencePolarization Analysis and Measurement II
CitySan Diego, CA, USA


Dive into the research topics of 'The ellipsometric measurements on SiO2 by intensity ratio technique'. Together they form a unique fingerprint.

Cite this