The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor

Coming Chen; Sun Jay Chang; Jih Wen Chou; Tony Lin; Wen Kuan Yeh; Chun Yen Chang; Wen Zheng Luo; Yao Jen Lee; Tien-Sheng Chao; Tiao Yuan Huang

doi:10.1143/JJAP.40.75

The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor

Coming Chen, Sun Jay Chang, Jih Wen Chou, Tony Lin, Wen Kuan Yeh, Chun Yen Chang, Wen Zheng Luo, Yao Jen Lee, Tien-Sheng Chao, Tiao Yuan Huang

Research output: Contribution to journal › Article › peer-review

Abstract

A complete study on the effects of indium channel implant energy on transistor characteristics including carder mobility, drain current, drain induce barrier lowering (DIBL), device breakdown, junction leakage, impact ionization rate and hot-carrier degradation were performed on 0.1 μm devices. It was found that devices with super-steep-retrograde (SSR) indium channel profile depict higher transconductance in linear region, albeit the saturation drive current is lower, compared to the conventional BF₂-doped control. In addition, In-doped devices also depict improved DIBL, I_on-I_off current ratio and transistor breakdown voltage. Finally, by increasing the indium implant energy, devices depict an improved transconductance, reduced DIBL and hot-carrier degradation, while suffering larger junction leakage and capacitance.

Original language	English
Pages (from-to)	75-79
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.40.75
State	Published - Jan 2001

Keywords

Indium
Junction leakage and saturation drive current
Mobility
Super-steep-retrograde (SSR)

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10.1143/JJAP.40.75

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Chen, C., Chang, S. J., Chou, J. W., Lin, T., Yeh, W. K., Chang, C. Y., Luo, W. Z., Lee, Y. J., Chao, T-S., & Huang, T. Y. (2001). The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40(1), 75-79. https://doi.org/10.1143/JJAP.40.75

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title = "The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor",

abstract = "A complete study on the effects of indium channel implant energy on transistor characteristics including carder mobility, drain current, drain induce barrier lowering (DIBL), device breakdown, junction leakage, impact ionization rate and hot-carrier degradation were performed on 0.1 μm devices. It was found that devices with super-steep-retrograde (SSR) indium channel profile depict higher transconductance in linear region, albeit the saturation drive current is lower, compared to the conventional BF2-doped control. In addition, In-doped devices also depict improved DIBL, Ion-Ioff current ratio and transistor breakdown voltage. Finally, by increasing the indium implant energy, devices depict an improved transconductance, reduced DIBL and hot-carrier degradation, while suffering larger junction leakage and capacitance.",

keywords = "Indium, Junction leakage and saturation drive current, Mobility, Super-steep-retrograde (SSR)",

author = "Coming Chen and Chang, {Sun Jay} and Chou, {Jih Wen} and Tony Lin and Yeh, {Wen Kuan} and Chang, {Chun Yen} and Luo, {Wen Zheng} and Lee, {Yao Jen} and Tien-Sheng Chao and Huang, {Tiao Yuan}",

year = "2001",

month = jan,

doi = "10.1143/JJAP.40.75",

language = "English",

volume = "40",

pages = "75--79",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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Chen, C, Chang, SJ, Chou, JW, Lin, T, Yeh, WK, Chang, CY, Luo, WZ, Lee, YJ, Chao, T-S & Huang, TY 2001, 'The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 40, no. 1, pp. 75-79. https://doi.org/10.1143/JJAP.40.75

The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor. / Chen, Coming; Chang, Sun Jay; Chou, Jih Wen et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 1, 01.2001, p. 75-79.

Research output: Contribution to journal › Article › peer-review

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AU - Chen, Coming

AU - Chang, Sun Jay

AU - Chou, Jih Wen

AU - Lin, Tony

AU - Yeh, Wen Kuan

AU - Chang, Chun Yen

AU - Luo, Wen Zheng

AU - Lee, Yao Jen

AU - Chao, Tien-Sheng

AU - Huang, Tiao Yuan

PY - 2001/1

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N2 - A complete study on the effects of indium channel implant energy on transistor characteristics including carder mobility, drain current, drain induce barrier lowering (DIBL), device breakdown, junction leakage, impact ionization rate and hot-carrier degradation were performed on 0.1 μm devices. It was found that devices with super-steep-retrograde (SSR) indium channel profile depict higher transconductance in linear region, albeit the saturation drive current is lower, compared to the conventional BF2-doped control. In addition, In-doped devices also depict improved DIBL, Ion-Ioff current ratio and transistor breakdown voltage. Finally, by increasing the indium implant energy, devices depict an improved transconductance, reduced DIBL and hot-carrier degradation, while suffering larger junction leakage and capacitance.

AB - A complete study on the effects of indium channel implant energy on transistor characteristics including carder mobility, drain current, drain induce barrier lowering (DIBL), device breakdown, junction leakage, impact ionization rate and hot-carrier degradation were performed on 0.1 μm devices. It was found that devices with super-steep-retrograde (SSR) indium channel profile depict higher transconductance in linear region, albeit the saturation drive current is lower, compared to the conventional BF2-doped control. In addition, In-doped devices also depict improved DIBL, Ion-Ioff current ratio and transistor breakdown voltage. Finally, by increasing the indium implant energy, devices depict an improved transconductance, reduced DIBL and hot-carrier degradation, while suffering larger junction leakage and capacitance.

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KW - Junction leakage and saturation drive current

KW - Mobility

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The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor

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Keywords

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