The effects of drain-bias on the threshold voltage instability in organic TFTs

Hsiao-Wen Zan; Shin Chin Kao

doi:10.1109/LED.2007.914081

The effects of drain-bias on the threshold voltage instability in organic TFTs

Hsiao-Wen Zan^*, Shin Chin Kao

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

In this letter, the influence of drain bias on the threshold voltage instability in pentacene-based organic thin-film transistors (OTFTs) was studied. By applying different drain biases to adjust the channel carrier concentration in linear mode, the threshold voltage shift was found to be proportional to the carrier concentration. The experimental data can be well quantitatively explained by the drain bias-stress theory developed for a-Si TFTs. The outcome gives the insight of the degradation mechanism of OTFTs and is important for the design of OTFT pixel circuit, OTFT analog amplifiers, or OTFT active loads.

Original language	English
Pages (from-to)	155-157
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	2
DOIs	https://doi.org/10.1109/LED.2007.914081
State	Published - 1 Feb 2008

Keywords

Bias-stress effect
Organic thin-film transistor (OTFT)
Pentacene
Reliability

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10.1109/LED.2007.914081

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abstract = "In this letter, the influence of drain bias on the threshold voltage instability in pentacene-based organic thin-film transistors (OTFTs) was studied. By applying different drain biases to adjust the channel carrier concentration in linear mode, the threshold voltage shift was found to be proportional to the carrier concentration. The experimental data can be well quantitatively explained by the drain bias-stress theory developed for a-Si TFTs. The outcome gives the insight of the degradation mechanism of OTFTs and is important for the design of OTFT pixel circuit, OTFT analog amplifiers, or OTFT active loads.",

keywords = "Bias-stress effect, Organic thin-film transistor (OTFT), Pentacene, Reliability",

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AU - Kao, Shin Chin

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N2 - In this letter, the influence of drain bias on the threshold voltage instability in pentacene-based organic thin-film transistors (OTFTs) was studied. By applying different drain biases to adjust the channel carrier concentration in linear mode, the threshold voltage shift was found to be proportional to the carrier concentration. The experimental data can be well quantitatively explained by the drain bias-stress theory developed for a-Si TFTs. The outcome gives the insight of the degradation mechanism of OTFTs and is important for the design of OTFT pixel circuit, OTFT analog amplifiers, or OTFT active loads.

AB - In this letter, the influence of drain bias on the threshold voltage instability in pentacene-based organic thin-film transistors (OTFTs) was studied. By applying different drain biases to adjust the channel carrier concentration in linear mode, the threshold voltage shift was found to be proportional to the carrier concentration. The experimental data can be well quantitatively explained by the drain bias-stress theory developed for a-Si TFTs. The outcome gives the insight of the degradation mechanism of OTFTs and is important for the design of OTFT pixel circuit, OTFT analog amplifiers, or OTFT active loads.

KW - Bias-stress effect

KW - Organic thin-film transistor (OTFT)

KW - Pentacene

KW - Reliability

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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The effects of drain-bias on the threshold voltage instability in organic TFTs

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Keywords

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