The effects of dielectric type and thickness on the characteristics of dynamic threshold metal oxide semiconductor transistors

Yao Jen Lee; Tien-Sheng Chao; Tiao Yuan Huang

doi:10.1143/JJAP.42.5405

The effects of dielectric type and thickness on the characteristics of dynamic threshold metal oxide semiconductor transistors

Yao Jen Lee^*, Tien-Sheng Chao, Tiao Yuan Huang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this paper, we discuss dynamic threshold MOS (DTMOS) operations for nMOSFETs of different dielectric types and thicknesses. We found that, under the DT mode of operation, all devices exhibit a threshold voltage close to 0.7 V, independent of the thickness and gate dielectric type of the device. This is due to the diminished influence of the body effect factor. Formulations of threshold voltage and subthreshold swing of DTMOS are developed to gain insights into this unique phenomenon, and simulation of the subthreshold swing is also provided.

Original language	English
Pages (from-to)	5405-5409
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	9 A
DOIs	https://doi.org/10.1143/JJAP.42.5405
State	Published - Sep 2003

Keywords

DTMOS
Gate oxide
Subthreshold swing

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10.1143/JJAP.42.5405

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abstract = "In this paper, we discuss dynamic threshold MOS (DTMOS) operations for nMOSFETs of different dielectric types and thicknesses. We found that, under the DT mode of operation, all devices exhibit a threshold voltage close to 0.7 V, independent of the thickness and gate dielectric type of the device. This is due to the diminished influence of the body effect factor. Formulations of threshold voltage and subthreshold swing of DTMOS are developed to gain insights into this unique phenomenon, and simulation of the subthreshold swing is also provided.",

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The effects of dielectric type and thickness on the characteristics of dynamic threshold metal oxide semiconductor transistors. / Lee, Yao Jen; Chao, Tien-Sheng; Huang, Tiao Yuan.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 9 A, 09.2003, p. 5405-5409.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The effects of dielectric type and thickness on the characteristics of dynamic threshold metal oxide semiconductor transistors

AU - Lee, Yao Jen

AU - Chao, Tien-Sheng

AU - Huang, Tiao Yuan

PY - 2003/9

Y1 - 2003/9

N2 - In this paper, we discuss dynamic threshold MOS (DTMOS) operations for nMOSFETs of different dielectric types and thicknesses. We found that, under the DT mode of operation, all devices exhibit a threshold voltage close to 0.7 V, independent of the thickness and gate dielectric type of the device. This is due to the diminished influence of the body effect factor. Formulations of threshold voltage and subthreshold swing of DTMOS are developed to gain insights into this unique phenomenon, and simulation of the subthreshold swing is also provided.

AB - In this paper, we discuss dynamic threshold MOS (DTMOS) operations for nMOSFETs of different dielectric types and thicknesses. We found that, under the DT mode of operation, all devices exhibit a threshold voltage close to 0.7 V, independent of the thickness and gate dielectric type of the device. This is due to the diminished influence of the body effect factor. Formulations of threshold voltage and subthreshold swing of DTMOS are developed to gain insights into this unique phenomenon, and simulation of the subthreshold swing is also provided.

KW - DTMOS

KW - Gate oxide

KW - Subthreshold swing

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U2 - 10.1143/JJAP.42.5405

DO - 10.1143/JJAP.42.5405

M3 - Article

AN - SCOPUS:0344925624

SN - 0021-4922

VL - 42

SP - 5405

EP - 5409

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9 A

ER -

The effects of dielectric type and thickness on the characteristics of dynamic threshold metal oxide semiconductor transistors

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Keywords

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