@inproceedings{86a91435985e40029ec46a7691676450,
title = "The Effect of the P-Substrate Connection on the HBM Robustness of P-type ESD Device",
abstract = "Although the p-substrate connection of p-type ESD device does not have any impact on the device's It2 while connecting the p-substrate to the ground degrades the human-body model (HBM) robustness of the device significantly. From the experiment results, adding N-type buried layer (NBL) to p-type ESD device can have the device HBM robustness invariant to the p-substrate connection. Based on the T-CAD simulations, the effect of the p-substrate connection on the HBM robustness of p-type ESD device is revealed in this paper. As HBM raises up the potential of the whole region of p-type ESD device after the onset of zapping for a while and then the high potential region of the device decreases with decreasing HBM current if the p-substrate is grounded, resulting in the current crowding. On the contrary, the high potential region of p-type ESD device does not decrease with decreasing HBM current if the p-substrate is floating or NBL is added to the device, resulting in the uniform current distribution.",
keywords = "ESD, HBM, It-2, T-CAD, TLP",
author = "Lee, {Jian Hsing} and Liao, {Chih Cherng} and Lin, {Wen Hsin} and Lin, {Chih Hsuan} and Karuna Nidhi and Jou, {Yeh Ning} and Chen, {Ke Horng}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2024 ; Conference date: 15-07-2024 Through 18-07-2024",
year = "2024",
doi = "10.1109/IPFA61654.2024.10691149",
language = "English",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2024",
address = "美國",
}