The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon

Chun Wang; Heng Tung Hsu; Jui Lung Lin; You Chen Weng; Yi Fan Tsao; Yuan Wang; Edward Yi Chang

doi:10.1088/1361-6641/acd13c

The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon

Chun Wang, Heng Tung Hsu, Jui Lung Lin, You Chen Weng, Yi Fan Tsao, Yuan Wang, Edward Yi Chang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this study, the effect of barrier thickness on the DC and RF performances of AlGaN/GaN high-electron mobility transistors (HEMTs) on silicon for millimeter wave applications is experimentally investigated. GaN HEMT devices with different barrier thicknesses were fabricated and characterized. While the device with the thinnest barrier exhibited the highest extrinsic transconductance (g_m) resulting from the shortest gate-to-channel distance, such configuration suffered from the lowest unit current-gain cut-off frequency (f_T) due to the increase of the total gate capacitance. Moreover, degradation in the output power was observed for devices with thinner barriers. Such degradation was related to the severe knee walkout as evidenced from drain-lag characterization.

Original language	English
Article number	074004
Journal	Semiconductor Science and Technology
Volume	38
Issue number	7
DOIs	https://doi.org/10.1088/1361-6641/acd13c
State	Published - Jul 2023

Keywords

AlGaN
barrier thickness
dispersive effect
GaN HEMT
large signal
Si substrate
small signal

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10.1088/1361-6641/acd13c

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title = "The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon",

abstract = "In this study, the effect of barrier thickness on the DC and RF performances of AlGaN/GaN high-electron mobility transistors (HEMTs) on silicon for millimeter wave applications is experimentally investigated. GaN HEMT devices with different barrier thicknesses were fabricated and characterized. While the device with the thinnest barrier exhibited the highest extrinsic transconductance (gm) resulting from the shortest gate-to-channel distance, such configuration suffered from the lowest unit current-gain cut-off frequency (fT) due to the increase of the total gate capacitance. Moreover, degradation in the output power was observed for devices with thinner barriers. Such degradation was related to the severe knee walkout as evidenced from drain-lag characterization.",

keywords = "AlGaN, barrier thickness, dispersive effect, GaN HEMT, large signal, Si substrate, small signal",

author = "Chun Wang and Hsu, {Heng Tung} and Lin, {Jui Lung} and Weng, {You Chen} and Tsao, {Yi Fan} and Yuan Wang and Chang, {Edward Yi}",

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doi = "10.1088/1361-6641/acd13c",

language = "English",

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T1 - The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon

AU - Wang, Chun

AU - Hsu, Heng Tung

AU - Lin, Jui Lung

AU - Weng, You Chen

AU - Tsao, Yi Fan

AU - Wang, Yuan

AU - Chang, Edward Yi

PY - 2023/7

Y1 - 2023/7

N2 - In this study, the effect of barrier thickness on the DC and RF performances of AlGaN/GaN high-electron mobility transistors (HEMTs) on silicon for millimeter wave applications is experimentally investigated. GaN HEMT devices with different barrier thicknesses were fabricated and characterized. While the device with the thinnest barrier exhibited the highest extrinsic transconductance (gm) resulting from the shortest gate-to-channel distance, such configuration suffered from the lowest unit current-gain cut-off frequency (fT) due to the increase of the total gate capacitance. Moreover, degradation in the output power was observed for devices with thinner barriers. Such degradation was related to the severe knee walkout as evidenced from drain-lag characterization.

AB - In this study, the effect of barrier thickness on the DC and RF performances of AlGaN/GaN high-electron mobility transistors (HEMTs) on silicon for millimeter wave applications is experimentally investigated. GaN HEMT devices with different barrier thicknesses were fabricated and characterized. While the device with the thinnest barrier exhibited the highest extrinsic transconductance (gm) resulting from the shortest gate-to-channel distance, such configuration suffered from the lowest unit current-gain cut-off frequency (fT) due to the increase of the total gate capacitance. Moreover, degradation in the output power was observed for devices with thinner barriers. Such degradation was related to the severe knee walkout as evidenced from drain-lag characterization.

KW - AlGaN

KW - barrier thickness

KW - dispersive effect

KW - GaN HEMT

KW - large signal

KW - Si substrate

KW - small signal

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U2 - 10.1088/1361-6641/acd13c

DO - 10.1088/1361-6641/acd13c

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SN - 0268-1242

VL - 38

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 7

M1 - 074004

ER -

The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon

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