The Effect of Oxygen Vacancy Concentration on Indium Gallium Oxide Solar Blind Photodetector

Kuan Yu Chen; Ching Chien Hsu; Hsin-Chieh Yu; Yu Ming Peng; Chih Chiang Yang; Yan Kuin Su

doi:10.1109/TED.2018.2817637

The Effect of Oxygen Vacancy Concentration on Indium Gallium Oxide Solar Blind Photodetector

Kuan Yu Chen, Ching Chien Hsu, Hsin-Chieh Yu, Yu Ming Peng, Chih Chiang Yang^*, Yan Kuin Su

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

In this paper, amorphous indium-gallium-oxide solar-blind metal-semiconductor-metal photodetectors were fabricated by using co-sputtering method. Three samples with different oxygen concentrations, namely, sample A without oxygen, sample B with 2% oxygen concentration, and sample C with 4% oxygen concentration, were investigated. The applied bias was 5 V during device characterization. The ultraviolet (UV)-to-visible rejection ratios were 39, 9.9 × 10³, and 1.1 × 10⁵ for samples A, B, and C, respectively. The dynamic responses of the decay times were 5.79/52.12 s, 1.96/30.49 s, and 0.02/0.75 s for samples A, B, and C, respectively. In summary, the 4% oxygen concentration sample exhibited excellent UV-to-visible rejection ratio and superior decay time.

Original language	English
Pages (from-to)	1817-1822
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	5
DOIs	https://doi.org/10.1109/TED.2018.2817637
State	Published - 10 Apr 2018

Keywords

Indium-gallium-oxide (IGO)
oxygen concentrations
solar-blind photodetectors

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10.1109/TED.2018.2817637

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@article{56d53f0690c24fb5b3241b86c17d4f82,

title = "The Effect of Oxygen Vacancy Concentration on Indium Gallium Oxide Solar Blind Photodetector",

abstract = "In this paper, amorphous indium-gallium-oxide solar-blind metal-semiconductor-metal photodetectors were fabricated by using co-sputtering method. Three samples with different oxygen concentrations, namely, sample A without oxygen, sample B with 2% oxygen concentration, and sample C with 4% oxygen concentration, were investigated. The applied bias was 5 V during device characterization. The ultraviolet (UV)-to-visible rejection ratios were 39, 9.9 × 103, and 1.1 × 105 for samples A, B, and C, respectively. The dynamic responses of the decay times were 5.79/52.12 s, 1.96/30.49 s, and 0.02/0.75 s for samples A, B, and C, respectively. In summary, the 4% oxygen concentration sample exhibited excellent UV-to-visible rejection ratio and superior decay time.",

keywords = "Indium-gallium-oxide (IGO), oxygen concentrations, solar-blind photodetectors",

author = "Chen, {Kuan Yu} and Hsu, {Ching Chien} and Hsin-Chieh Yu and Peng, {Yu Ming} and Yang, {Chih Chiang} and Su, {Yan Kuin}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2018",

month = apr,

day = "10",

doi = "10.1109/TED.2018.2817637",

language = "English",

volume = "65",

pages = "1817--1822",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - The Effect of Oxygen Vacancy Concentration on Indium Gallium Oxide Solar Blind Photodetector

AU - Chen, Kuan Yu

AU - Hsu, Ching Chien

AU - Yu, Hsin-Chieh

AU - Peng, Yu Ming

AU - Yang, Chih Chiang

AU - Su, Yan Kuin

PY - 2018/4/10

Y1 - 2018/4/10

N2 - In this paper, amorphous indium-gallium-oxide solar-blind metal-semiconductor-metal photodetectors were fabricated by using co-sputtering method. Three samples with different oxygen concentrations, namely, sample A without oxygen, sample B with 2% oxygen concentration, and sample C with 4% oxygen concentration, were investigated. The applied bias was 5 V during device characterization. The ultraviolet (UV)-to-visible rejection ratios were 39, 9.9 × 103, and 1.1 × 105 for samples A, B, and C, respectively. The dynamic responses of the decay times were 5.79/52.12 s, 1.96/30.49 s, and 0.02/0.75 s for samples A, B, and C, respectively. In summary, the 4% oxygen concentration sample exhibited excellent UV-to-visible rejection ratio and superior decay time.

AB - In this paper, amorphous indium-gallium-oxide solar-blind metal-semiconductor-metal photodetectors were fabricated by using co-sputtering method. Three samples with different oxygen concentrations, namely, sample A without oxygen, sample B with 2% oxygen concentration, and sample C with 4% oxygen concentration, were investigated. The applied bias was 5 V during device characterization. The ultraviolet (UV)-to-visible rejection ratios were 39, 9.9 × 103, and 1.1 × 105 for samples A, B, and C, respectively. The dynamic responses of the decay times were 5.79/52.12 s, 1.96/30.49 s, and 0.02/0.75 s for samples A, B, and C, respectively. In summary, the 4% oxygen concentration sample exhibited excellent UV-to-visible rejection ratio and superior decay time.

KW - Indium-gallium-oxide (IGO)

KW - oxygen concentrations

KW - solar-blind photodetectors

UR - http://www.scopus.com/inward/record.url?scp=85045293119&partnerID=8YFLogxK

U2 - 10.1109/TED.2018.2817637

DO - 10.1109/TED.2018.2817637

M3 - Article

AN - SCOPUS:85045293119

SN - 0018-9383

VL - 65

SP - 1817

EP - 1822

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

The Effect of Oxygen Vacancy Concentration on Indium Gallium Oxide Solar Blind Photodetector

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