The effect of indium tin oxide as an ohmic contact for the 850 nm GaAs oxide-confined VCSELs

Wen Jang Jiang; Meng Chyi Wu; Hsin-Chieh Yu; Chun Yuan Huang; Chia Pin Sung; Jim Yong Chi

doi:10.1016/S0038-1101(02)00128-4

The effect of indium tin oxide as an ohmic contact for the 850 nm GaAs oxide-confined VCSELs

Wen Jang Jiang, Meng Chyi Wu^*, Hsin-Chieh Yu, Chun Yuan Huang, Chia Pin Sung, Jim Yong Chi

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this article, we report the effect of indium tin oxide (ITO) as a p-type ohmic contact for the 850 nm GaAs oxide-confined vertical-cavity surface-emitting lasers (VCSELs). The VCSELs with ITO contact have a threshold current of 0.96 mA, a full-width-at-half-maximum angle of beam divergence of 27° and an ellipticity of 103.8% for the far-field pattern at a 10-mA driving current, which are the same as those of the conventional VCSELs with Au/Zn/Au or Ti/Pt/Au ohmic contacts. In addition, the VCSELs with ITO contact exhibit a light output power of 1.27 times in magnitude higher than those of the conventional VCSELs.

Original language	English
Pages (from-to)	1945-1948
Number of pages	4
Journal	Solid-State Electronics
Volume	46
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1101(02)00128-4
State	Published - Nov 2002

Keywords

Indium tin oxide
Vertical-cavity surface-emitting lasers

Access to Document

10.1016/S0038-1101(02)00128-4

Cite this

@article{4af8d80ffb4c48daa8eafa6a141baf7c,

title = "The effect of indium tin oxide as an ohmic contact for the 850 nm GaAs oxide-confined VCSELs",

abstract = "In this article, we report the effect of indium tin oxide (ITO) as a p-type ohmic contact for the 850 nm GaAs oxide-confined vertical-cavity surface-emitting lasers (VCSELs). The VCSELs with ITO contact have a threshold current of 0.96 mA, a full-width-at-half-maximum angle of beam divergence of 27° and an ellipticity of 103.8% for the far-field pattern at a 10-mA driving current, which are the same as those of the conventional VCSELs with Au/Zn/Au or Ti/Pt/Au ohmic contacts. In addition, the VCSELs with ITO contact exhibit a light output power of 1.27 times in magnitude higher than those of the conventional VCSELs.",

keywords = "Indium tin oxide, Vertical-cavity surface-emitting lasers",

author = "Jiang, {Wen Jang} and Wu, {Meng Chyi} and Hsin-Chieh Yu and Huang, {Chun Yuan} and Sung, {Chia Pin} and Chi, {Jim Yong}",

year = "2002",

month = nov,

doi = "10.1016/S0038-1101(02)00128-4",

language = "English",

volume = "46",

pages = "1945--1948",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "11",

}

TY - JOUR

T1 - The effect of indium tin oxide as an ohmic contact for the 850 nm GaAs oxide-confined VCSELs

AU - Jiang, Wen Jang

AU - Wu, Meng Chyi

AU - Yu, Hsin-Chieh

AU - Huang, Chun Yuan

AU - Sung, Chia Pin

AU - Chi, Jim Yong

PY - 2002/11

Y1 - 2002/11

N2 - In this article, we report the effect of indium tin oxide (ITO) as a p-type ohmic contact for the 850 nm GaAs oxide-confined vertical-cavity surface-emitting lasers (VCSELs). The VCSELs with ITO contact have a threshold current of 0.96 mA, a full-width-at-half-maximum angle of beam divergence of 27° and an ellipticity of 103.8% for the far-field pattern at a 10-mA driving current, which are the same as those of the conventional VCSELs with Au/Zn/Au or Ti/Pt/Au ohmic contacts. In addition, the VCSELs with ITO contact exhibit a light output power of 1.27 times in magnitude higher than those of the conventional VCSELs.

AB - In this article, we report the effect of indium tin oxide (ITO) as a p-type ohmic contact for the 850 nm GaAs oxide-confined vertical-cavity surface-emitting lasers (VCSELs). The VCSELs with ITO contact have a threshold current of 0.96 mA, a full-width-at-half-maximum angle of beam divergence of 27° and an ellipticity of 103.8% for the far-field pattern at a 10-mA driving current, which are the same as those of the conventional VCSELs with Au/Zn/Au or Ti/Pt/Au ohmic contacts. In addition, the VCSELs with ITO contact exhibit a light output power of 1.27 times in magnitude higher than those of the conventional VCSELs.

KW - Indium tin oxide

KW - Vertical-cavity surface-emitting lasers

UR - http://www.scopus.com/inward/record.url?scp=0036838850&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(02)00128-4

DO - 10.1016/S0038-1101(02)00128-4

M3 - Article

AN - SCOPUS:0036838850

SN - 0038-1101

VL - 46

SP - 1945

EP - 1948

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

The effect of indium tin oxide as an ohmic contact for the 850 nm GaAs oxide-confined VCSELs

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this