TY - JOUR
T1 - The Effect of Fluorine Doping in the Charge Trapping Layer on Device Characteristics and Reliability of E-Mode GaN MIS-HEMTs
AU - Yang, Tsung Ying
AU - Wu, Sih Rong
AU - Wu, Jui Sheng
AU - Liang, Yan Kui
AU - Kuo, Mei Yan
AU - Iwai, Hiroshi
AU - Chang, Edward Yi
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2024/6/1
Y1 - 2024/6/1
N2 - In this study, we investigate the device characteristics and reliability of the hybrid ferroelectric charge trap gate-stack enhancement-mode gallium nitride MIS-high electron mobility transistors (FEG-HEMTs) with various doping elements in the charge trapping layer (CTL). FEG-HEMTs were fabricated with fluorine-doped (F-HfO2) and nitrogen-doped HfO2 (HfON) films as the CTLs. Incorporating fluorine and nitrogen into HfO2 resulted in a notable decrease in oxygen vacancy and dangling bond densities. This, in turn, improved the interface stability and subsequently enhanced the device performance and reliability. The F-doped FEG-HEMT was confirmed to have high performance as well as high stability with high threshold voltage (Vth) of 5.43 V, maximum drain current (ID,MAX) of 760.2 mA/mm, and breakdown voltage (BV) of 906 V. Furthermore, stress gate BV, retention time, time-dependent dielectric breakdown (TDDB), and constant stress bias test, which contribute significantly to the reliability of FEG gate-stack, are reported in this article.
AB - In this study, we investigate the device characteristics and reliability of the hybrid ferroelectric charge trap gate-stack enhancement-mode gallium nitride MIS-high electron mobility transistors (FEG-HEMTs) with various doping elements in the charge trapping layer (CTL). FEG-HEMTs were fabricated with fluorine-doped (F-HfO2) and nitrogen-doped HfO2 (HfON) films as the CTLs. Incorporating fluorine and nitrogen into HfO2 resulted in a notable decrease in oxygen vacancy and dangling bond densities. This, in turn, improved the interface stability and subsequently enhanced the device performance and reliability. The F-doped FEG-HEMT was confirmed to have high performance as well as high stability with high threshold voltage (Vth) of 5.43 V, maximum drain current (ID,MAX) of 760.2 mA/mm, and breakdown voltage (BV) of 906 V. Furthermore, stress gate BV, retention time, time-dependent dielectric breakdown (TDDB), and constant stress bias test, which contribute significantly to the reliability of FEG gate-stack, are reported in this article.
KW - AlGaN/gallium nitride (GaN) enhancement mode
KW - fluoride-doped charge trap gate-stack
KW - high threshold voltage
KW - nitride-doped charge trap gate-stack
KW - time-dependent dielectric breakdown (TDDB)
UR - http://www.scopus.com/inward/record.url?scp=85193224169&partnerID=8YFLogxK
U2 - 10.1109/TED.2024.3393933
DO - 10.1109/TED.2024.3393933
M3 - Article
AN - SCOPUS:85193224169
SN - 0018-9383
VL - 71
SP - 3603
EP - 3608
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 6
ER -