The Effect of Electromigration and Stress Migration on NT-Cu RDLs Passivated with Titanium Dioxide

Yi Quan Lin, Ching Yu Tang, Yu Wen Hung, You Yi Lin, Chih Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Due to the shrinking size of chip devices, the current density carried by redistribution layer (RDLs) increases. We used titanium dioxide (TiO2) as the passivation layer to enhance the lifetime of electro migration. The lifetime of TiO2-capped NT-Cu RDLs increased about 2 times compared to those coated with polyimide (PI). In this study, we found the mechanism of failure on NT-Cu RDLs capped with TiO2 was the electro migration-induced voiding combined with the stress migration.

Original languageEnglish
Title of host publication2024 International Conference on Electronics Packaging, ICEP 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages155-156
Number of pages2
ISBN (Electronic)9784991191176
DOIs
StatePublished - 2024
Event23rd International Conference on Electronics Packaging, ICEP 2024 - Toyama, Japan
Duration: 17 Apr 202420 Apr 2024

Publication series

Name2024 International Conference on Electronics Packaging, ICEP 2024

Conference

Conference23rd International Conference on Electronics Packaging, ICEP 2024
Country/TerritoryJapan
CityToyama
Period17/04/2420/04/24

Keywords

  • Electromigration
  • Nanotwinned Cu
  • Redistribution layers
  • Stress migration

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