The Effect of Channel Hot-Carrier Stressing on Gate-Oxide Integrity in MOSFET's

Ih Chin Chen; Jeong Yeol Choi; Tung Yi Chan; Chen-Ming Hu

doi:10.1109/16.8800

The Effect of Channel Hot-Carrier Stressing on Gate-Oxide Integrity in MOSFET's

Ih Chin Chen^*, Jeong Yeol Choi, Tung Yi Chan, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

The correlation between channel hot-carrier stressing and gate-oxide integrity is studied. It is found that channel hot carriers have no detectable effect on gate-oxide integrity even when other parameters (e.g., ΔV_Tand ΔI_D) have become intolerably degraded. In the extreme cases of stressing at V_G ≈ V_twith measurable hole injection current, however, the oxide charge to breakdown decreases linearly with the amount of hole fluence injected during the channel hot-hole stressing. This may limit the endurance of a nonvolatile memory using hot holes for erasing. This can also explain the gate-to-drain breakdown of a device biased in the snap-back region, since snap-back at low gate voltage is favorable for hole injection. Snap-back-induced oxide breakdown could be an ESD failure mechanism.

Original language	English
Pages (from-to)	2253-2258
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	35
Issue number	12
DOIs	https://doi.org/10.1109/16.8800
State	Published - 1 Jan 1988

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abstract = "The correlation between channel hot-carrier stressing and gate-oxide integrity is studied. It is found that channel hot carriers have no detectable effect on gate-oxide integrity even when other parameters (e.g., ΔVTand ΔID) have become intolerably degraded. In the extreme cases of stressing at VG ≈ Vtwith measurable hole injection current, however, the oxide charge to breakdown decreases linearly with the amount of hole fluence injected during the channel hot-hole stressing. This may limit the endurance of a nonvolatile memory using hot holes for erasing. This can also explain the gate-to-drain breakdown of a device biased in the snap-back region, since snap-back at low gate voltage is favorable for hole injection. Snap-back-induced oxide breakdown could be an ESD failure mechanism.",

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The Effect of Channel Hot-Carrier Stressing on Gate-Oxide Integrity in MOSFET's

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