Abstract
The formation of p-type GaN film is a key technology in developing optoelectronic devices. P-type doping (concentration ∼ 1017 cm-3) has been achieved in grown GaN by metalorganic chemical vapor deposition (MOCVD) with Mg (CP2Mg) doping. The Hall measurement results indicate that Mg diffused GaN films also have p-type conductivity with carrier concentration about 1017 cm-3 and a mobility of 10 cm2 V-1 s-1. For the as-grown Mg-doped GaN, the room temperature photoluminescence (PL) spectra show a blue emission peak around 420-450 nm, and the spectral peak depends on the carrier concentrations. For Mg-diffused GaN, the PL spectra shows only a broad violet emission for samples diffused at 900-1100°C.
Original language | English |
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Pages (from-to) | 210-213 |
Number of pages | 4 |
Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Volume | 75 |
Issue number | 2-3 |
DOIs | |
State | Published - 1 Jun 2000 |
Event | The IUMRS International Conference on Advanced Materials 1999, Symposium N: Compound Semiconductors - Beijing, China Duration: 13 Jun 1999 → 18 Jun 1999 |
Keywords
- P-type doping
- P-type GaN film