The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region

S. H. Guo, M. L. Lee, C. S. Lin, J. K. Sheu, Y. S. Wu, C. K. Sun, Cheng-Huang Kuo, C. J. Tun, J. W. Shi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al0.2Ga0.8N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2009
DOIs
StatePublished - 2009
EventConference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States
Duration: 31 May 20095 Jun 2009

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2009
Country/TerritoryUnited States
CityBaltimore, MD
Period31/05/095/06/09

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