The annihilation of threading dislocations in the germanium epitaxially grown within the silicon nanoscale trenches

Keyphrases

• Epitaxially Grown 100%
• Germanium 100%
• Threading Dislocation 100%
• Ge Film 66%
• Silica 33%
• Thermal Annealing 33%
• Si Substrate 33%
• Transmission Electron Microscopy 33%
• Sidewall 33%
• Silicon Substrate 33%
• Lattice Mismatch 33%
• Deposition Methods 33%
• Epitaxial Growth 33%
• Shallow Trench Isolation 33%
• Gliding 33%
• Selective Growth 33%
• Isolation Method 33%
• Growth Technology 33%
• Reduced Defect Density 33%

Material Science

• Film 100%
• Silicon 100%
• Germanium 100%
• Transmission Electron Microscopy 50%
• Epitaxy 50%
• Defect Density 50%

Engineering

• Nanoscale 100%
• Threading Dislocation 100%
• Transmissions 20%
• Si Substrate 20%
• Side Wall 20%
• Silicon Substrate 20%
• Nanometre 20%
• Defect Density 20%
• Shallow Trench Isolation 20%
• Gliding Distance 20%