TFT materials and devices

Po Tsun Liu

doi:10.1016/B978-0-12-803581-8.09624-7

TFT materials and devices

Po Tsun Liu^*

^*Corresponding author for this work

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

2 Scopus citations

Abstract

TFT devices play a role of conducting electric current to charge the LC capacitor and storage capacitor, acting as an electric current driver to light “on” and “off” the OLED pixel besides a switch. A TFT device structure comprises several material layers, including metallic gate electrode, gate dielectric film, semiconductor channel, and source/drain electrodes, which is similar to metal-oxide-semiconductor field effect transistor (MOSFET). The details of TFT design, materials, fabrication and applications will be discussed for their respect usages.

Original language	English
Title of host publication	Encyclopedia of Modern Optics
Publisher	Elsevier
Pages	12-16
Number of pages	5
Volume	1-5
ISBN (Electronic)	9780128149829
ISBN (Print)	9780128092835
DOIs	https://doi.org/10.1016/B978-0-12-803581-8.09624-7
State	Published - 1 Jan 2018

Keywords

A-Si:H TFT
AOS TFT
Device reliability
Field-effect mobility
Leakage current
OTFT
On-state current
Poly-Si TFT
Subthreshold
Thin film transistor

Access to Document

10.1016/B978-0-12-803581-8.09624-7

Cite this

@inbook{a841b9ed4fe341c4bd36775e3da1b4de,

title = "TFT materials and devices",

abstract = "TFT devices play a role of conducting electric current to charge the LC capacitor and storage capacitor, acting as an electric current driver to light “on” and “off” the OLED pixel besides a switch. A TFT device structure comprises several material layers, including metallic gate electrode, gate dielectric film, semiconductor channel, and source/drain electrodes, which is similar to metal-oxide-semiconductor field effect transistor (MOSFET). The details of TFT design, materials, fabrication and applications will be discussed for their respect usages.",

keywords = "A-Si:H TFT, AOS TFT, Device reliability, Field-effect mobility, Leakage current, OTFT, On-state current, Poly-Si TFT, Subthreshold, Thin film transistor",

author = "Liu, {Po Tsun}",

year = "2018",

month = jan,

day = "1",

doi = "10.1016/B978-0-12-803581-8.09624-7",

language = "English",

isbn = "9780128092835",

volume = "1-5",

pages = "12--16",

booktitle = "Encyclopedia of Modern Optics",

publisher = "Elsevier",

address = "荷蘭",

}

TY - CHAP

T1 - TFT materials and devices

AU - Liu, Po Tsun

PY - 2018/1/1

Y1 - 2018/1/1

N2 - TFT devices play a role of conducting electric current to charge the LC capacitor and storage capacitor, acting as an electric current driver to light “on” and “off” the OLED pixel besides a switch. A TFT device structure comprises several material layers, including metallic gate electrode, gate dielectric film, semiconductor channel, and source/drain electrodes, which is similar to metal-oxide-semiconductor field effect transistor (MOSFET). The details of TFT design, materials, fabrication and applications will be discussed for their respect usages.

AB - TFT devices play a role of conducting electric current to charge the LC capacitor and storage capacitor, acting as an electric current driver to light “on” and “off” the OLED pixel besides a switch. A TFT device structure comprises several material layers, including metallic gate electrode, gate dielectric film, semiconductor channel, and source/drain electrodes, which is similar to metal-oxide-semiconductor field effect transistor (MOSFET). The details of TFT design, materials, fabrication and applications will be discussed for their respect usages.

KW - A-Si:H TFT

KW - AOS TFT

KW - Device reliability

KW - Field-effect mobility

KW - Leakage current

KW - OTFT

KW - On-state current

KW - Poly-Si TFT

KW - Subthreshold

KW - Thin film transistor

UR - http://www.scopus.com/inward/record.url?scp=85078649997&partnerID=8YFLogxK

U2 - 10.1016/B978-0-12-803581-8.09624-7

DO - 10.1016/B978-0-12-803581-8.09624-7

M3 - Chapter

AN - SCOPUS:85078649997

SN - 9780128092835

VL - 1-5

SP - 12

EP - 16

BT - Encyclopedia of Modern Optics

PB - Elsevier

ER -

TFT materials and devices

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this