Terahertz InP HBT Oscillators

Jae Sung Rieh, Jongwon Yun, Daekeun Yoon, Jungsoo Kim, Heekang Son

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations

    Abstract

    An overview of various high-frequency InP HBT oscillators that can be used as terahertz signal sources is presented. A 300-GHz fundamental-mode oscillator was first developed based on InP HBT technology, and then subsequently modified for additional oscillators with improved function or performance, which includes a 300-GHz voltage-controlled oscillator (VCO), a 280-GHz high-power oscillator with 10-dBm output, and a 600-GHz push-push oscillator. The 300-GHz oscillator was also successfully employed as a signal source for THz imaging, which is also briefly described.

    Original languageEnglish
    Title of host publication2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781538659717
    DOIs
    StatePublished - 5 Nov 2018
    Event2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018 - Melbourne, Australia
    Duration: 15 Aug 201817 Aug 2018

    Publication series

    Name2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018

    Conference

    Conference2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018
    Country/TerritoryAustralia
    CityMelbourne
    Period15/08/1817/08/18

    Keywords

    • heterojunction bipolar transistors (HBT)
    • oscillators
    • Submillimeter wave circuits

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