TY - JOUR
T1 - Temperature stability of dynamic-threshold mode SiGe p-metal-oxide- semiconductor field effect transistors
AU - Liao, Wei Ming
AU - Li, Pei-Wen
PY - 2005/12/8
Y1 - 2005/12/8
N2 - In this study, we have systematically investigated the thermal stability of strained silicon-germanium (SiGe) and bulk Si p-metal-oxide-semiconductor field-effect transistors (MOSFETs) in dynamic-threshold (DT) mode and standard mode operation, respectively, from 77 to 400 K. Possessing advantages of good carrier confinement and higher carrier mobility in the strained-SiGe material, SiGe DT-MOSFETs exhibit not only enhanced drive current but also better thermal stability for threshold voltage, substrate sensitivity, and low-frequency noise over the entire operating temperature range than their counterpart Si devices. That is very important for radio-frequency micropower analogue and digital integrated circuits applications.
AB - In this study, we have systematically investigated the thermal stability of strained silicon-germanium (SiGe) and bulk Si p-metal-oxide-semiconductor field-effect transistors (MOSFETs) in dynamic-threshold (DT) mode and standard mode operation, respectively, from 77 to 400 K. Possessing advantages of good carrier confinement and higher carrier mobility in the strained-SiGe material, SiGe DT-MOSFETs exhibit not only enhanced drive current but also better thermal stability for threshold voltage, substrate sensitivity, and low-frequency noise over the entire operating temperature range than their counterpart Si devices. That is very important for radio-frequency micropower analogue and digital integrated circuits applications.
KW - Dynamic threshold
KW - Silicon germanium
KW - Temperature stability
UR - http://www.scopus.com/inward/record.url?scp=31544440423&partnerID=8YFLogxK
U2 - 10.1143/JJAP.44.8453
DO - 10.1143/JJAP.44.8453
M3 - Article
AN - SCOPUS:31544440423
SN - 0021-4922
VL - 44
SP - 8453
EP - 8455
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 12
ER -