Temperature instability of amorphous In-Ga-Zn-O thin film transistors

Yih Shing Lee; Sheng Kai Fan; Chii Wen Chen; Tung Wei Yen; Horng-Chih Lin

doi:10.1109/ICAIT.2013.6621529

Temperature instability of amorphous In-Ga-Zn-O thin film transistors

Yih Shing Lee, Sheng Kai Fan, Chii Wen Chen, Tung Wei Yen, Horng-Chih Lin

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this paper, the temperature dependence of electrical behavior on amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) having plasma-enhanced chemical vapor deposition (PECVD) tetraethylorthosilicate (TEOS) oxide as the dielectric material was evaluated. Sub-threshold swing (SS) increases and V_th is negatively shifted as the temperature rises. Temperature-dependent sub-threshold characteristics were also observed for the fabricated a-IGZO TFTs. The increase in sub-threshold current in a-IGZO TFTs is well described by the thermally activated electrons.

Original language	English
Title of host publication	2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013
Pages	153-154
Number of pages	2
DOIs	https://doi.org/10.1109/ICAIT.2013.6621529
State	Published - 2013
Event	2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013 - Hsinchu, Taiwan Duration: 6 Jul 2013 → 9 Jul 2013

Publication series

Name	2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013

Conference

Conference	2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013
Country/Territory	Taiwan
City	Hsinchu
Period	6/07/13 → 9/07/13

Keywords

In-Ga-Zn-O
PECVD TEOS
sub-threshold swing
temperature Instability
thermal activation energy

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10.1109/ICAIT.2013.6621529

Cite this

Lee, Y. S., Fan, S. K., Chen, C. W., Yen, T. W., & Lin, H.-C. (2013). Temperature instability of amorphous In-Ga-Zn-O thin film transistors. In 2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013 (pp. 153-154). Article 6621529 (2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013). https://doi.org/10.1109/ICAIT.2013.6621529

@inproceedings{bbbc860f4f714f91a9433c1a216ca781,

title = "Temperature instability of amorphous In-Ga-Zn-O thin film transistors",

abstract = "In this paper, the temperature dependence of electrical behavior on amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) having plasma-enhanced chemical vapor deposition (PECVD) tetraethylorthosilicate (TEOS) oxide as the dielectric material was evaluated. Sub-threshold swing (SS) increases and Vth is negatively shifted as the temperature rises. Temperature-dependent sub-threshold characteristics were also observed for the fabricated a-IGZO TFTs. The increase in sub-threshold current in a-IGZO TFTs is well described by the thermally activated electrons.",

keywords = "In-Ga-Zn-O, PECVD TEOS, sub-threshold swing, temperature Instability, thermal activation energy",

author = "Lee, {Yih Shing} and Fan, {Sheng Kai} and Chen, {Chii Wen} and Yen, {Tung Wei} and Horng-Chih Lin",

year = "2013",

doi = "10.1109/ICAIT.2013.6621529",

language = "English",

isbn = "9781479904655",

series = "2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013",

pages = "153--154",

booktitle = "2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013",

note = "2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013 ; Conference date: 06-07-2013 Through 09-07-2013",

}

Lee, YS, Fan, SK, Chen, CW, Yen, TW & Lin, H-C 2013, Temperature instability of amorphous In-Ga-Zn-O thin film transistors. in 2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013., 6621529, 2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013, pp. 153-154, 2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013, Hsinchu, Taiwan, 6/07/13. https://doi.org/10.1109/ICAIT.2013.6621529

Temperature instability of amorphous In-Ga-Zn-O thin film transistors. / Lee, Yih Shing; Fan, Sheng Kai; Chen, Chii Wen et al.
2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013. 2013. p. 153-154 6621529 (2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Temperature instability of amorphous In-Ga-Zn-O thin film transistors

AU - Lee, Yih Shing

AU - Fan, Sheng Kai

AU - Chen, Chii Wen

AU - Yen, Tung Wei

AU - Lin, Horng-Chih

PY - 2013

Y1 - 2013

N2 - In this paper, the temperature dependence of electrical behavior on amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) having plasma-enhanced chemical vapor deposition (PECVD) tetraethylorthosilicate (TEOS) oxide as the dielectric material was evaluated. Sub-threshold swing (SS) increases and Vth is negatively shifted as the temperature rises. Temperature-dependent sub-threshold characteristics were also observed for the fabricated a-IGZO TFTs. The increase in sub-threshold current in a-IGZO TFTs is well described by the thermally activated electrons.

AB - In this paper, the temperature dependence of electrical behavior on amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) having plasma-enhanced chemical vapor deposition (PECVD) tetraethylorthosilicate (TEOS) oxide as the dielectric material was evaluated. Sub-threshold swing (SS) increases and Vth is negatively shifted as the temperature rises. Temperature-dependent sub-threshold characteristics were also observed for the fabricated a-IGZO TFTs. The increase in sub-threshold current in a-IGZO TFTs is well described by the thermally activated electrons.

KW - In-Ga-Zn-O

KW - PECVD TEOS

KW - sub-threshold swing

KW - temperature Instability

KW - thermal activation energy

UR - http://www.scopus.com/inward/record.url?scp=84888223935&partnerID=8YFLogxK

U2 - 10.1109/ICAIT.2013.6621529

DO - 10.1109/ICAIT.2013.6621529

M3 - Conference contribution

AN - SCOPUS:84888223935

SN - 9781479904655

T3 - 2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013

SP - 153

EP - 154

BT - 2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013

T2 - 2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013

Y2 - 6 July 2013 through 9 July 2013

ER -

Temperature instability of amorphous In-Ga-Zn-O thin film transistors

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