Temperature effect on the growth of strained GaAs1-ySby/GaAs (y>0.4) quantum wells by MOVPE

Y. K. Su; C. T. Wan; R. W. Chuang; C. Y. Huang; W. C. Chen; Y. S. Wang; Hsin-Chieh Yu

doi:10.1016/j.jcrysgro.2008.07.085

Temperature effect on the growth of strained GaAs_1-ySb_y/GaAs (y>0.4) quantum wells by MOVPE

Y. K. Su^*, C. T. Wan, R. W. Chuang, C. Y. Huang, W. C. Chen, Y. S. Wang, Hsin-Chieh Yu

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In this article, the GaAsSb/GaAs quantum wells (QWs) grown at different temperatures were studied. The growth rate increases and the Sb composition decreases as the growth temperature increases. The photoluminescence properties of GaAsSb/GaAs QWs were measured at room temperature. The samples grown at higher temperature possess lower photoluminescence intensity and larger full-width at half-maximum (FWHM), which means that the Sb segregation effects become more significant at high growth temperature.

Original language	English
Pages (from-to)	4850-4853
Number of pages	4
Journal	Journal of Crystal Growth
Volume	310
Issue number	23
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.07.085
State	Published - 15 Nov 2008

Keywords

A1. Photoluminescence
A1. X-ray diffraction
A3. Metalorganic vapor-phase epitaxy
A3. Quantum well
B1. Antimonides
B2. Semiconducting ternary compounds

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10.1016/j.jcrysgro.2008.07.085

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title = "Temperature effect on the growth of strained GaAs1-ySby/GaAs (y>0.4) quantum wells by MOVPE",

abstract = "In this article, the GaAsSb/GaAs quantum wells (QWs) grown at different temperatures were studied. The growth rate increases and the Sb composition decreases as the growth temperature increases. The photoluminescence properties of GaAsSb/GaAs QWs were measured at room temperature. The samples grown at higher temperature possess lower photoluminescence intensity and larger full-width at half-maximum (FWHM), which means that the Sb segregation effects become more significant at high growth temperature.",

keywords = "A1. Photoluminescence, A1. X-ray diffraction, A3. Metalorganic vapor-phase epitaxy, A3. Quantum well, B1. Antimonides, B2. Semiconducting ternary compounds",

author = "Su, {Y. K.} and Wan, {C. T.} and Chuang, {R. W.} and Huang, {C. Y.} and Chen, {W. C.} and Wang, {Y. S.} and Hsin-Chieh Yu",

year = "2008",

month = nov,

day = "15",

doi = "10.1016/j.jcrysgro.2008.07.085",

language = "English",

volume = "310",

pages = "4850--4853",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "23",

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TY - JOUR

T1 - Temperature effect on the growth of strained GaAs1-ySby/GaAs (y>0.4) quantum wells by MOVPE

AU - Su, Y. K.

AU - Wan, C. T.

AU - Chuang, R. W.

AU - Huang, C. Y.

AU - Chen, W. C.

AU - Wang, Y. S.

AU - Yu, Hsin-Chieh

PY - 2008/11/15

Y1 - 2008/11/15

N2 - In this article, the GaAsSb/GaAs quantum wells (QWs) grown at different temperatures were studied. The growth rate increases and the Sb composition decreases as the growth temperature increases. The photoluminescence properties of GaAsSb/GaAs QWs were measured at room temperature. The samples grown at higher temperature possess lower photoluminescence intensity and larger full-width at half-maximum (FWHM), which means that the Sb segregation effects become more significant at high growth temperature.

AB - In this article, the GaAsSb/GaAs quantum wells (QWs) grown at different temperatures were studied. The growth rate increases and the Sb composition decreases as the growth temperature increases. The photoluminescence properties of GaAsSb/GaAs QWs were measured at room temperature. The samples grown at higher temperature possess lower photoluminescence intensity and larger full-width at half-maximum (FWHM), which means that the Sb segregation effects become more significant at high growth temperature.

KW - A1. Photoluminescence

KW - A1. X-ray diffraction

KW - A3. Metalorganic vapor-phase epitaxy

KW - A3. Quantum well

KW - B1. Antimonides

KW - B2. Semiconducting ternary compounds

UR - http://www.scopus.com/inward/record.url?scp=56249097191&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2008.07.085

DO - 10.1016/j.jcrysgro.2008.07.085

M3 - Article

AN - SCOPUS:56249097191

SN - 0022-0248

VL - 310

SP - 4850

EP - 4853

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 23

ER -

Temperature effect on the growth of strained GaAs_1-ySb_y/GaAs (y>0.4) quantum wells by MOVPE

Abstract

Keywords

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