In this article, the GaAsSb/GaAs quantum wells (QWs) grown at different temperatures were studied. The growth rate increases and the Sb composition decreases as the growth temperature increases. The photoluminescence properties of GaAsSb/GaAs QWs were measured at room temperature. The samples grown at higher temperature possess lower photoluminescence intensity and larger full-width at half-maximum (FWHM), which means that the Sb segregation effects become more significant at high growth temperature.
- A1. Photoluminescence
- A1. X-ray diffraction
- A3. Metalorganic vapor-phase epitaxy
- A3. Quantum well
- B1. Antimonides
- B2. Semiconducting ternary compounds