The temperature coefficient (TC) of n-type diode-connected polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated. The relationship between TC and the activation energy is observed and explained. It is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate TC. By using the diode-connected poly-Si TFTs with different channel widths, a new bandgap reference circuit for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a LTPS process, the output voltage reference exhibits a very low TC of 195ppm/°C, between 25 °C and 125 °C.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 30 Oct 2008|
|Event||2008 SID International Symposium - Los Angeles, CA, United States|
Duration: 20 May 2008 → 21 May 2008