Temperature coefficient of diode-connected LTPS Poly-si TFTs and its application on the bandgap reference circuit

Ting Chou Lu; Hsiao-Wen Zan; Ming-Dou Ker; Wei Ming Huang; Kun Chih Lin; Ching Chieh Shin; Chao Chian Chiu; Chun Ting Liu

doi:10.1889/1.3069413

Temperature coefficient of diode-connected LTPS Poly-si TFTs and its application on the bandgap reference circuit

Ting Chou Lu^*, Hsiao-Wen Zan, Ming-Dou Ker, Wei Ming Huang, Kun Chih Lin, Ching Chieh Shin, Chao Chian Chiu, Chun Ting Liu

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The temperature coefficient (TC) of n-type diode-connected polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated. The relationship between TC and the activation energy is observed and explained. It is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate TC. By using the diode-connected poly-Si TFTs with different channel widths, a new bandgap reference circuit for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a LTPS process, the output voltage reference exhibits a very low TC of 195ppm/°C, between 25 °C and 125 °C.

Original language	English
Pages (from-to)	1410-1413
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	39
Issue number	3
DOIs	https://doi.org/10.1889/1.3069413
State	Published - 30 Oct 2008
Event	2008 SID International Symposium - Los Angeles, CA, United States Duration: 20 May 2008 → 21 May 2008

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title = "Temperature coefficient of diode-connected LTPS Poly-si TFTs and its application on the bandgap reference circuit",

abstract = "The temperature coefficient (TC) of n-type diode-connected polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated. The relationship between TC and the activation energy is observed and explained. It is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate TC. By using the diode-connected poly-Si TFTs with different channel widths, a new bandgap reference circuit for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a LTPS process, the output voltage reference exhibits a very low TC of 195ppm/°C, between 25 °C and 125 °C.",

author = "Lu, {Ting Chou} and Hsiao-Wen Zan and Ming-Dou Ker and Huang, {Wei Ming} and Lin, {Kun Chih} and Shin, {Ching Chieh} and Chiu, {Chao Chian} and Liu, {Chun Ting}",

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journal = "Digest of Technical Papers - SID International Symposium",

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TY - JOUR

T1 - Temperature coefficient of diode-connected LTPS Poly-si TFTs and its application on the bandgap reference circuit

AU - Lu, Ting Chou

AU - Zan, Hsiao-Wen

AU - Ker, Ming-Dou

AU - Huang, Wei Ming

AU - Lin, Kun Chih

AU - Shin, Ching Chieh

AU - Chiu, Chao Chian

AU - Liu, Chun Ting

PY - 2008/10/30

Y1 - 2008/10/30

N2 - The temperature coefficient (TC) of n-type diode-connected polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated. The relationship between TC and the activation energy is observed and explained. It is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate TC. By using the diode-connected poly-Si TFTs with different channel widths, a new bandgap reference circuit for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a LTPS process, the output voltage reference exhibits a very low TC of 195ppm/°C, between 25 °C and 125 °C.

AB - The temperature coefficient (TC) of n-type diode-connected polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated. The relationship between TC and the activation energy is observed and explained. It is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate TC. By using the diode-connected poly-Si TFTs with different channel widths, a new bandgap reference circuit for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a LTPS process, the output voltage reference exhibits a very low TC of 195ppm/°C, between 25 °C and 125 °C.

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U2 - 10.1889/1.3069413

DO - 10.1889/1.3069413

M3 - Conference article

AN - SCOPUS:54549102087

SN - 0097-966X

VL - 39

SP - 1410

EP - 1413

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 3

T2 - 2008 SID International Symposium

Y2 - 20 May 2008 through 21 May 2008

ER -

Temperature coefficient of diode-connected LTPS Poly-si TFTs and its application on the bandgap reference circuit

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