TY - JOUR
T1 - Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors
AU - Tso, Chia Tsung
AU - Liu, Tung Yu
AU - Pan, Fu-Ming
AU - Sheu, Jeng-Tzong
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/4
Y1 - 2017/4
N2 - The temperature effects of both gate-all-around polycrystalline silicon nanowire (GAA poly-Si NW) junctionless (JL) and inversion mode (IM) transistor devices at various temperatures (77-410 K) were investigated. The electrical characteristics of these devices, such as subthreshold swing (SS), threshold voltage (Vth), and drain-induced barrier lowering (DIBL), were also characterized and compared in this study. Moreover, JL devices with different doping concentrations at various temperatures were also discussed. Both Vth and Ion showed significant doping concentration dependences for JL devices with doping concentrations of 1 × 1019 and 5 × 1019cm%3. However, the electrical characteristics of JL devices showed less thermal sensitivity when the doping concentration reached 1020cm%3.
AB - The temperature effects of both gate-all-around polycrystalline silicon nanowire (GAA poly-Si NW) junctionless (JL) and inversion mode (IM) transistor devices at various temperatures (77-410 K) were investigated. The electrical characteristics of these devices, such as subthreshold swing (SS), threshold voltage (Vth), and drain-induced barrier lowering (DIBL), were also characterized and compared in this study. Moreover, JL devices with different doping concentrations at various temperatures were also discussed. Both Vth and Ion showed significant doping concentration dependences for JL devices with doping concentrations of 1 × 1019 and 5 × 1019cm%3. However, the electrical characteristics of JL devices showed less thermal sensitivity when the doping concentration reached 1020cm%3.
UR - http://www.scopus.com/inward/record.url?scp=85017184767&partnerID=8YFLogxK
U2 - 10.7567/JJAP.56.04CD14
DO - 10.7567/JJAP.56.04CD14
M3 - Article
AN - SCOPUS:85017184767
SN - 0021-4922
VL - 56
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 4
M1 - 04CD14
ER -