Temperature-accelerated dielectric breakdown in ultrathin gate oxides

C. C. Chen*, C. Y. Chang, Chao-Hsin Chien, T. Y. Huang, Horng-Chih Lin, M. S. Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


The aggravated temperature acceleration effects on oxide breakdown for oxide thickness range from 8.7 to 2.5 nm were investigated. The accelerated temperature dependence on dielectric breakdown of the scaled oxide may be ascribed to the increasing fraction of the structural transition layer.

Original languageEnglish
Pages (from-to)3708-3710
Number of pages3
JournalApplied Physics Letters
Issue number24
StatePublished - 14 Jun 1999


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