Temperature-accelerated dielectric breakdown in ultrathin gate oxides

C. C. Chen; C. Y. Chang; Chao-Hsin Chien; T. Y. Huang; Horng-Chih Lin; M. S. Liang

doi:10.1063/1.123228

Temperature-accelerated dielectric breakdown in ultrathin gate oxides

C. C. Chen^*, C. Y. Chang, Chao-Hsin Chien, T. Y. Huang, Horng-Chih Lin, M. S. Liang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The aggravated temperature acceleration effects on oxide breakdown for oxide thickness range from 8.7 to 2.5 nm were investigated. The accelerated temperature dependence on dielectric breakdown of the scaled oxide may be ascribed to the increasing fraction of the structural transition layer.

Original language	English
Pages (from-to)	3708-3710
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	24
DOIs	https://doi.org/10.1063/1.123228
State	Published - 14 Jun 1999

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@article{e083f3774f9b45318bd5505de6592a21,

title = "Temperature-accelerated dielectric breakdown in ultrathin gate oxides",

abstract = "The aggravated temperature acceleration effects on oxide breakdown for oxide thickness range from 8.7 to 2.5 nm were investigated. The accelerated temperature dependence on dielectric breakdown of the scaled oxide may be ascribed to the increasing fraction of the structural transition layer.",

author = "Chen, {C. C.} and Chang, {C. Y.} and Chao-Hsin Chien and Huang, {T. Y.} and Horng-Chih Lin and Liang, {M. S.}",

year = "1999",

month = jun,

day = "14",

doi = "10.1063/1.123228",

language = "English",

volume = "74",

pages = "3708--3710",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

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TY - JOUR

T1 - Temperature-accelerated dielectric breakdown in ultrathin gate oxides

AU - Chen, C. C.

AU - Chang, C. Y.

AU - Chien, Chao-Hsin

AU - Huang, T. Y.

AU - Lin, Horng-Chih

AU - Liang, M. S.

PY - 1999/6/14

Y1 - 1999/6/14

N2 - The aggravated temperature acceleration effects on oxide breakdown for oxide thickness range from 8.7 to 2.5 nm were investigated. The accelerated temperature dependence on dielectric breakdown of the scaled oxide may be ascribed to the increasing fraction of the structural transition layer.

AB - The aggravated temperature acceleration effects on oxide breakdown for oxide thickness range from 8.7 to 2.5 nm were investigated. The accelerated temperature dependence on dielectric breakdown of the scaled oxide may be ascribed to the increasing fraction of the structural transition layer.

UR - http://www.scopus.com/inward/record.url?scp=0032620499&partnerID=8YFLogxK

U2 - 10.1063/1.123228

DO - 10.1063/1.123228

M3 - Article

AN - SCOPUS:0032620499

SN - 0003-6951

VL - 74

SP - 3708

EP - 3710

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Temperature-accelerated dielectric breakdown in ultrathin gate oxides

Abstract

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